Zobrazeno 1 - 10
of 74
pro vyhledávání: '"Saleh H. Al-Heniti"'
Autor:
Reda M. El-Shishtawy, Robert C. Haddon, Saleh H. Al-Heniti, Bahaaudin M. Raffah, K. Berrada, S. Abdel-Khalek, Yas F. Al-Hadeethi
Publikováno v:
Results in Physics, Vol 8, Iss , Pp 89-92 (2018)
In this work, we examine the process of the quantum transfer of energy considering time-dependent dipole-dipole interaction in a dimer system characterized by two-level atom systems. By taking into account the effect of the acceleration and speed of
Externí odkaz:
https://doaj.org/article/7255e3dd1ce24e1293cb6213d71103ef
Autor:
Y.S. Rammah, M.I. Sayyed, Yas Al-Hadeethi, Saleh H. Al-Heniti, Moustafa Ahmed, Maha M. AlShammari
Publikováno v:
Ceramics International. 47:611-618
Herein, a traditional melt quenching method was utilized to synthesize glasses with a nominal chemical composition (80-x)TeO2-xB2O3–5ZnO–5Li2O3–10Bi2O3: 30≤ x ≤ 80 mol%). The produced sample was coded as TBBZL30 to TBBZL80. X-ray diffractio
Publikováno v:
Ceramics International. 46:19198-19208
Six specimens of tellurite glass doped with rare earth with a nominal chemical composition 65TeO2–25Na2O-(10-x)NdCl3-xSm2O3: 0.0 ≤ x ≤ 2.5 mol% were fabricated. The fabrication process was conventional melt quenching. The glasses were coded as
Autor:
R. I. Badran, Saleha Al-Zhrani, Ahmad Umar, Yas Al-Hadeethi, Bahaaudin M. Raffah, Saleh H. Al-Heniti
Publikováno v:
Materials Express. 10:794-801
Herein, we report the high-temperature electrical characteristics of heterojunction diode fabricated based on n-Ga-doped ZnO nanowires/p-Silicon substrate. Various electronic properties such as rectification ratio, the effective barrier height, the d
ZnO Nanowalls/Si Substrate Heterojunction Assembly: Morphological, Optical and Electrical Properties
Publikováno v:
Journal of Nanoelectronics and Optoelectronics. 15:586-591
In this paper, a film of n-ZnO nanowalls was deposited over p-silicon (Si) substrate by thermally evaporating metallic zinc powder in oxygen gas environment. Several techniques were used to examine various properties of prepared ZnO nanowalls. The mo
Autor:
R. I. Badran, Ahmad Umar, Abdulrazak M. Alharbi, Bahaaudin M. Raffah, Saleh H. Al-Heniti, Yas Al-Hadeethi
Publikováno v:
Materials Express. 10:21-28
In this paper, the heterojunction diode based on n-Ga doped ZnO nanowires interconnected with disks/p-Si assembly was fabricated and their low-temperature electrical properties were examined. The Ga-doped ZnO nanowires interconnected with disks were
Autor:
R. I. Badran, Saleh H. Al-Heniti, Yas Al-Hadeethi, Asim Jilani, Ahmad Umar, M. Shahnawaze Ansari, Bahaaudin M. Raffah
Publikováno v:
Materials Express. 10:29-36
Heterojunction diode based on n-ZnO nanorods/p-Silicon (Si) assembly was fabricated, examined and reported here. Horizontal quartz tube thermal evaporation technique was used for the growth of ZnO nanorods on Si substrate. The nanorods were character
Autor:
Fahad M. Al-Marzouki, Saleh H. Al-Heniti, Akihisa Inoue, E. Shalaan, S. Al-Hashimi, A.Y. Obaid
Publikováno v:
Journal of Non-Crystalline Solids. 518:123-127
In this work bulk metallic glasses of Zr55Al10Ni10Pd25, Zr50Al10Ni15Pd25 and Zr40Al10Ni25Pd25 in rod form s were prepared by copper mold casting technique. The glass-forming ability, thermal stability and corrosion behavior were examined with the aim
Autor:
Ahmad Umar, Kulvinder Singh, Saleh H. Al-Heniti, Yas Al-Hadeethi, Ahmed Ibrahim, Andrea Cochis, Bahaaudin M. Raffah
Publikováno v:
Journal of Nanoscience and Nanotechnology. 19:3637-3642
Herein, we report the synthesis, characterization and picric acid chemical sensing application of samarium (Sm) doped ZnO nanorods. The Sm-doped ZnO nanorods were synthesized by facile hydrothermal process and characterized using various analytical m
Publikováno v:
Nanoscience and Nanotechnology Letters. 11:561-568