Zobrazeno 1 - 10
of 759
pro vyhledávání: '"Salamo Gregory"'
Autor:
Liu, Shang, Liang, Yunfan, Zhao, Haochen, Eldose, Nirosh M., Bae, Jin-Hee, Concepcion, Omar, Jin, Xiaochen, Chen, Shunda, Bikmukhametov, Ilias, Akey, Austin, Cline, Cory T., Covian, Alejandra Cuervo, Wang, Xiaoxin, Li, Tianshu, Zeng, Yuping, Buca, Dan, Yu, Shui-Qing, Salamo, Gregory J., Zhang, Shengbai, Liu, Jifeng
Atomic short-range order (SRO) in direct-bandgap GeSn for infrared photonics has recently attracted attention due to its notable impact on band structures. However, the SRO in GeSn thin films grown by different methods have hardly been compared. This
Externí odkaz:
http://arxiv.org/abs/2407.02767
Autor:
Lalwani, Anand V, John, Abel, Shetty, Satish, Giparakis, Miriam, Arora, Kanika, Maharaj, Avidesh, Strasser, Gottfried, Andrews, Aaron Maxwell, Koeck, Helmut, Mantooth, Alan, Salamo, Gregory, Senesky, Debbie G
This follow-on work investigates the effect of temperature on the frequency limit of 2-dimensional electron gas (2DEG) Hall-effect sensors.
Comment: 4 pages
Comment: 4 pages
Externí odkaz:
http://arxiv.org/abs/2402.11393
Autor:
Gunder, Calbi, Alavijeh, Mohammad Zamani, Wangila, Emmanuel, de Oliveira, Fernando Maia, Sheibani, Aida, Kryvyi, Serhii, Attwood, Paul C., Mazur, Yuriy I., Yu, Shui-Qing, Salamo, Gregory J.
The growth of high-composition GeSn films of the future will likely be guided via algorithms. In this study we show how a logarithmic-based algorithm can be used to obtain high-quality GeSn compositions up to 16 % on GaAs (001) substrates via molecul
Externí odkaz:
http://arxiv.org/abs/2309.06695
Autor:
Wu Jiang, Fan Dongsheng, Li Shibing, Yu Shui-Qing, Li Zhenhua, Wang Zhiming, Guo Aqiang, Manasreh Omar, Salamo Gregory
Publikováno v:
Nanoscale Research Letters, Vol 5, Iss 6, Pp 1079-1084 (2010)
Abstract The morphological and optical properties of In0.2Ga0.8As/GaAs quantum wells grown on various substrates are investigated for possible application to superluminescent diodes. The In0.2Ga0.8As/GaAs quantum wells are grown by molecular beam epi
Externí odkaz:
https://doaj.org/article/c1cf23836abd473baa084081f56e31de
Publikováno v:
Nanoscale Research Letters, Vol 5, Iss 8, Pp 1320-1323 (2010)
Abstract Multilayers of InGaAs nanostructures are grown on GaAs(210) by molecular beam epitaxy. With reducing the thickness of GaAs interlayer spacer, a transition from InGaAs quantum dashes to arrow-like nanostructures is observed by atomic force mi
Externí odkaz:
https://doaj.org/article/5bd3aeed1ae74dd996e44845085dbbb4
Publikováno v:
Nanoscale Research Letters, Vol 1, Iss 1, Pp 57-61 (2006)
Abstract The spontaneously formation of epitaxial GaAs quantum-dot pairs was demonstrated on an AlGaAs surface using Ga droplets as a Ga nano-source. The dot pair formation was attributed to the anisotropy of surface diffusion during high-temperature
Externí odkaz:
https://doaj.org/article/80be81115c374b079ba443827f961d0a
Autor:
Kim Dongyoung, Tang Mingchu, Wu Jiang, Hatch Sabina, Maidaniuk Yurii, Dorogan Vitaliy, Mazur Yuriy I., Salamo Gregory J., Liu Huiyun
Publikováno v:
E3S Web of Conferences, Vol 16, p 16001 (2017)
In this work, the effect of Si doping on InAs/GaAs quantum dot solar cells with AlAs cap layers is studied. The AlAs cap layers suppress the formation of the wetting layer during quantum dot growth. This helps achieve quantum dot state filling, which
Externí odkaz:
https://doaj.org/article/bd452a2eba0746d29adcf6f938ee0e45
Autor:
Dun, Yutong, Wang, Ying, Liu, Xiaohui, Guo, Yingnan, Mazur, Yuriy I., Ware, Morgan E., Salamo, Gregory J., Liang, Baolai
Publikováno v:
In Journal of Luminescence November 2024 275
Autor:
Kumar, Rahul, Maidaniuk, Yurii, de Oliveira, Fernando Maia, Mazur, Yuriy I., Salamo, Gregory J.
Publikováno v:
In Journal of Luminescence January 2025 277
Autor:
de Oliveira, Fernando M., Kuchuk, Andrian V., Ghosh, Pijush K., Ware, Morgan E., Mazur, Yuriy I., Salamo, Gregory J.
Publikováno v:
In Surfaces and Interfaces May 2024 48