Zobrazeno 1 - 10
of 909
pro vyhledávání: '"Salamo G"'
Autor:
Laurindo Jr., V., Castro, E. D. Guarin, Jacobsen, G. M., de Oliveira, E. R. C., Domenegueti, J. F. M., Alén, B., Mazur, Yu. I., Salamo, G. J., Marques, G. E., Marega Jr., E., Teodoro, M. D., Lopez-Richard, V.
This paper discusses the combined effects of optical excitation power, interface roughness, lattice temperature, and applied magnetic fields on the spin-coherence of excitonic states in GaAs/AlGaAs multiple quantum wells. For low optical powers, at l
Externí odkaz:
http://arxiv.org/abs/2107.02129
Akademický článek
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Akademický článek
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Autor:
Laurindo Jr., V., Mazur, Yu. I., de Oliveira, E. R. Cardozo, Alén, B., Ware, M. E., Marega Jr., E., Zhuchenko, Z. Ya., Tarasov, G. G., Marques, G. E., Teodoro, M. D., Salamo, G. J.
Publikováno v:
Phys. Rev. B 100, 035309 (2019)
A magnetophotoluminescence study of the carrier transfer with hybrid InAs/GaAs quantum dot(QD)-InGaAs quantum well (QW) structures is carried out where we observe an unsual dependence of the photoluminescence (PL) on the GaAs barrier thickness at str
Externí odkaz:
http://arxiv.org/abs/1902.05812
Lateral quantum dot molecules consist of at least two closely-spaced InGaAs quantum dots arranged such that the axis connecting the quantum dots is perpendicular to the growth direction. These quantum dot complexes are called molecules because the sm
Externí odkaz:
http://arxiv.org/abs/1109.4566
Autor:
Teodoro, M. D., Campo Jr., V. L., Lopez-Richard, V., Marega Jr., E., Marques, G. E., Galvao-Gobato, Y., Iikawa, F., Brasil, M. J. S. P., AbuWaar, Z. Y., Dorogan, V. G., Mazur, Yu. I., Benamara, M., Salamo, G. J.
We report a comprehensive discussion of quantum interference effects due to the finite structure of excitons in quantum rings and their first experimental corroboration observed in the optical recombinations. Anomalous features that appear in the exp
Externí odkaz:
http://arxiv.org/abs/0908.0288
Publikováno v:
Optics express 14, 22 (2006) 10726-10732
A method to probe the guiding characteristics of waveguides formed in real-time is proposed and evaluated. It is based on the analysis of the time dependent light distribution observed at the exit face of the waveguide while progressively altering it
Externí odkaz:
http://arxiv.org/abs/0709.2407
Autor:
Muller, A., Flagg, E. B., Bianucci, P., Deppe, D. G., Ma, W., Zhang, J., Salamo, G. J., Shih, C. K.
Narrow line-widths and the possibility of enhanced spontaneous emission via coupling to microcavities make semiconductor quantum dots ideal for harnessing coherent quantum phenomena at the single photon level. So far, however, all approaches have rel
Externí odkaz:
http://arxiv.org/abs/0707.3808
A first-principles-derived method is used to study the morphology and electric-field-induced evolution of stripe nanodomains in (001) BaTiO3 (BTO) ultrathin films, and to compare them with those in (001) Pb(Zr,Ti)O3 (PZT) ultrathin films. The BaTiO3
Externí odkaz:
http://arxiv.org/abs/cond-mat/0610674
Structural Evolution During Formation and Filling of Self-patterned Nanoholes on GaAs (100) Surfaces
Publikováno v:
Nanoscale Research Letters; 20240101, Issue: Preprints p1-4, 4p