Zobrazeno 1 - 10
of 753
pro vyhledávání: '"Salamo, Gregory"'
Autor:
Liu, Shang, Liang, Yunfan, Zhao, Haochen, Eldose, Nirosh M., Bae, Jin-Hee, Concepcion, Omar, Jin, Xiaochen, Chen, Shunda, Bikmukhametov, Ilias, Akey, Austin, Cline, Cory T., Covian, Alejandra Cuervo, Wang, Xiaoxin, Li, Tianshu, Zeng, Yuping, Buca, Dan, Yu, Shui-Qing, Salamo, Gregory J., Zhang, Shengbai, Liu, Jifeng
Atomic short-range order (SRO) in direct-bandgap GeSn for infrared photonics has recently attracted attention due to its notable impact on band structures. However, the SRO in GeSn thin films grown by different methods have hardly been compared. This
Externí odkaz:
http://arxiv.org/abs/2407.02767
Autor:
Lalwani, Anand V, John, Abel, Shetty, Satish, Giparakis, Miriam, Arora, Kanika, Maharaj, Avidesh, Strasser, Gottfried, Andrews, Aaron Maxwell, Koeck, Helmut, Mantooth, Alan, Salamo, Gregory, Senesky, Debbie G
This follow-on work investigates the effect of temperature on the frequency limit of 2-dimensional electron gas (2DEG) Hall-effect sensors.
Comment: 4 pages
Comment: 4 pages
Externí odkaz:
http://arxiv.org/abs/2402.11393
Autor:
Gunder, Calbi, Alavijeh, Mohammad Zamani, Wangila, Emmanuel, de Oliveira, Fernando Maia, Sheibani, Aida, Kryvyi, Serhii, Attwood, Paul C., Mazur, Yuriy I., Yu, Shui-Qing, Salamo, Gregory J.
The growth of high-composition GeSn films of the future will likely be guided via algorithms. In this study we show how a logarithmic-based algorithm can be used to obtain high-quality GeSn compositions up to 16 % on GaAs (001) substrates via molecul
Externí odkaz:
http://arxiv.org/abs/2309.06695
Autor:
Dun, Yutong, Wang, Ying, Liu, Xiaohui, Guo, Yingnan, Mazur, Yuriy I., Ware, Morgan E., Salamo, Gregory J., Liang, Baolai
Publikováno v:
In Journal of Luminescence November 2024 275
Autor:
de Oliveira, Fernando M., Kuchuk, Andrian V., Ghosh, Pijush K., Ware, Morgan E., Mazur, Yuriy I., Salamo, Gregory J.
Publikováno v:
In Surfaces and Interfaces May 2024 48
Autor:
Zhou, Yiyin, Ojo, Solomon, Miao, Yuanhao, Tran, Huong, Grant, Joshua M., Abernathy, Grey, Amoah, Sylvester, Bass, Jake, Salamo, Gregory, Du, Wei, Liu, Jifeng, Margetis, Joe, Tolle, John, Zhang, Yong-Hang, Sun, Greg, Soref, Richard A., Li, Baohua, Yu, Shui-Qing
GeSn lasers enable monolithic integration of lasers on the Si platform using all-group-IV direct-bandgap materials. Although optically pumped GeSn lasers have made significant progress, the study of the electrically injected lasers has just begun onl
Externí odkaz:
http://arxiv.org/abs/2009.12229
Autor:
Zhou, Yiyin, Miao, Yuanhao, Ojo, Solomon, Tran, Huong, Abernathy, Grey, Grant, Joshua M., Amoah, Sylvester, Salamo, Gregory, Du, Wei, Liu, Jifeng, Margetis, Joe, Tolle, John, Zhang, Yong-Hang, Sun, Greg, Soref, Richard A., Li, Baohua, Yu, Shui-Qing
The significant progress of GeSn material development has enabled a feasible solution to the long-desired monolithically integrated lasers on the Si platform. While there are many reports focused on optically pumped lasers, GeSn lasers through electr
Externí odkaz:
http://arxiv.org/abs/2004.09402
Autor:
Liu, Jingtao, Li, Hang, Liu, Xiaohui, Wang, Ying, Guo, Yingnan, Wang, Shufang, Fu, Guangsheng, Mazur, Yuriy I., Ware, Morgan E., Salamo, Gregory J., Liang, Baolai
Publikováno v:
In Applied Surface Science 1 November 2023 636
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