Zobrazeno 1 - 10
of 616
pro vyhledávání: '"Salahuddin, Sayeef"'
Autor:
Husain, Sajid, Harris, Isaac, Meisenheimer, Peter, Mantri, Sukriti, Li, Xinyan, Ramesh, Maya, Behera, Piush, Taghinejad, Hossein, Kim, Jaegyu, Kavle, Pravin, Zhou, Shiyu, Kim, Tae Yeon, Zhang, Hongrui, Stephenson, Paul, Analytis, James G., Schlom, Darrell, Salahuddin, Sayeef, Íñiguez-González, Jorge, Xu, Bin, Martin, Lane W., Caretta, Lucas, Han, Yimo, Bellaiche, Laurent, Yao, Zhi, Ramesh, Ramamoorthy
Antiferromagnets have attracted significant attention in the field of magnonics, as promising candidates for ultralow-energy carriers for information transfer for future computing. The role of crystalline orientation distribution on magnon transport
Externí odkaz:
http://arxiv.org/abs/2404.04746
HfO$_2$- and ZrO$_2$-based ferroelectric thin films have emerged as promising candidates for the gate oxides of next generation electronic devices. Recent work has experimentally demonstrated that a tetragonal/orthorhombic (t/o-) phase mixture with p
Externí odkaz:
http://arxiv.org/abs/2402.05331
Modern microelectronic devices are composed of interfaces between a large number of materials, many of which are in amorphous or polycrystalline phases. Modeling such non-crystalline materials using first-principles methods such as density functional
Externí odkaz:
http://arxiv.org/abs/2310.06995
Autor:
Brahma, Pratik, Salahuddin, Sayeef
We show that a classical spin liquid phase can emerge from an ordered magnetic state in the two-dimensional frustrated Shastry-Sutherland Ising lattice due to lateral confinement. Two distinct classical spin liquid states are stabilized (i) long-rang
Externí odkaz:
http://arxiv.org/abs/2310.06244
Autor:
Huang, Xiaoxi, Chen, Xianzhe, Li, Yuhang, Mangeri, John, Zhang, Hongrui, Ramesh, Maya, Taghinejad, Hossein, Meisenheimer, Peter, Caretta, Lucas, Susarla, Sandhya, Jain, Rakshit, Klewe, Christoph, Wang, Tianye, Chen, Rui, Hsu, Cheng-Hsiang, Pan, Hao, Yin, Jia, Shafer, Padraic, Qiu, Ziqiang, Rodrigues, Davi R., Heinonen, Olle, Vasudevan, Dilip, Iniguez, Jorge, Schlom, Darrell G., Salahuddin, Sayeef, Martin, Lane W., Analytis, James G., Ralph, Daniel C., Cheng, Ran, Yao, Zhi, Ramesh, Ramamoorthy
A collective excitation of the spin structure in a magnetic insulator can transmit spin-angular momentum with negligible dissipation. This quantum of a spin wave, introduced more than nine decades ago, has always been manipulated through magnetic dip
Externí odkaz:
http://arxiv.org/abs/2306.02185
Autor:
Hoffmann, Michael, Khan, Asif Islam, Serrao, Claudy, Lu, Zhongyuan, Salahuddin, Sayeef, Pešić, Milan, Slesazeck, Stefan, Schroeder, Uwe, Mikolajick, Thomas
Transient negative capacitance effects in epitaxial ferroelectric Pb(Zr₀.₂Ti₀.₈)O₃ capacitors are investigated with a focus on the dynamical switching behavior governed by domain nucleation and growth. Voltage pulses are applied to a series
Externí odkaz:
https://tud.qucosa.de/id/qucosa%3A80423
https://tud.qucosa.de/api/qucosa%3A80423/attachment/ATT-0/
https://tud.qucosa.de/api/qucosa%3A80423/attachment/ATT-0/
We predict that an interplay between isotropic and anisotropic exchange interactions in a honeycomb lattice structure can lead to topological edge conduction when the anisotropic interaction is at least twice the strength of the isotropic interaction
Externí odkaz:
http://arxiv.org/abs/2212.08316
Autor:
Kumar, Prabhat, Nonaka, Andrew, Jambunathan, Revathi, Pahwa, Girish, Salahuddin, Sayeef, Yao, Zhi
We present a massively parallel, 3D phase-field simulation framework for modeling ferro-electric materials based scalable logic devices. We self-consistently solve the time-dependent Ginzburg Landau (TDGL) equation for ferroelectric polarization, Poi
Externí odkaz:
http://arxiv.org/abs/2210.15668
Autor:
Gottscho, Richard A., Levine, Edlyn V., Liu, Tsu-Jae King, McIntyre, Paul C., Mitra, Subhasish, Murmann, Boris, Rabaey, Jan M., Salahuddin, Sayeef, Shih, Willy C., Wong, H. -S. Philip
Semiconductor innovation drives improvements to technologies that are critical to modern society. The country that successfully accelerates semiconductor innovation is positioned to lead future semiconductor-driven industries and benefit from the res
Externí odkaz:
http://arxiv.org/abs/2204.02216
Publikováno v:
In Solid State Electronics October 2024 220