Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Salah Rahmouni"'
Publikováno v:
Journal of Information Systems and Telecommunication (JIST). 11:57-64
Publikováno v:
Silicon. 15:3261-3268
Autor:
Giovanni Nastasi, Amen Allah Guizani, Faouzi Nasri, Vittorio Romano, Mohamed Fadhel Ben Aissa, Houssem Rezgui, Hafedh Belmabrouk, Salah Rahmouni
A flexible framework is obtained for enhancing both the thermal and electrical performance of fin field-effect transistor (FinFET) technology. Investigation of the nanoscale heat conduction within a short-channel field-effect transistor can be regard
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f45957c40c3e18e97be482266873221d
http://hdl.handle.net/20.500.11769/483632
http://hdl.handle.net/20.500.11769/483632
Autor:
Salah Rahmouni, Lilia Zighed
Publikováno v:
Applications of Silicon Photonics in Sensors and Waveguides
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::78f410b79cb3f702b2efefd1f252d54d
https://doi.org/10.5772/intechopen.74479
https://doi.org/10.5772/intechopen.74479