Zobrazeno 1 - 10
of 240
pro vyhledávání: '"Salah M. Bedair"'
Publikováno v:
JOM. 73:293-298
Silicon and sapphire are common substrates for AlN, InGaN, and GaN thin films in several applications such as photovoltaic and light-embedded diodes. Threading dislocations are generated at interfaces between III-nitride (III-N) layers and these subs
Publikováno v:
Materials Science and Engineering: B. 242:104-110
Laterally grown GaN-on-Si substrate is promising for solid state lighting, high power density devices, and wireless communication applications among others. Despite their superior optical and electrical properties, they suffer from high dislocation-d
Modelling of III-Nitride Epitaxial Layers Grown on Silicon Substrates with Low Dislocation-Densities
Publikováno v:
MRS Advances. 4:755-760
Large lattice and thermal expansion coefficients mismatches between III-Nitride (III N) epitaxial layers and their substrates inevitably generate defects on the interfaces. Such defects as dislocations affect the reliability, life time, and performan
Publikováno v:
The Minerals, Metals & Materials Series ISBN: 9783030362959
The strain relaxation mechanism in III-N materials is occurred through the motion of dislocations that generated at III-N/Si interface as a result of large mismatch in lattice and thermal expansion coefficients. As a result of the large lattice misma
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1f1fb78b9ae02aa1e5f76b50f88cebaa
https://doi.org/10.1007/978-3-030-36296-6_188
https://doi.org/10.1007/978-3-030-36296-6_188
Publikováno v:
Superlattices and Microstructures. 160:107065
InyGa1-yN templates are grown with y ≤ 13.5% and a few nm surface roughness. These templates are used successfully to address two of the main issues facing long wavelength emitting LEDs, mainly the low growth temperature and high values of strain i
Publikováno v:
Applied Physics Letters. 119:122101
Using the semibulk approach, p-InxGa1−xN semibulk (p-SB) templates were grown with an indium content ranging from 2.4% to 15.2% via metalorganic chemical vapor deposition. When compared to optimized bulk p-GaN, the hole concentration in p-SB with a
Publikováno v:
2019 IEEE 46th Photovoltaic Specialists Conference (PVSC).
We present a low temperature and low pressure approach to multijunction solar cell fabrication combining the high efficiency multi-junction concept with the low cost of thin film technology in one solar cell structure. The intermetallic bonding appro
Publikováno v:
IEEE Journal of Photovoltaics. 6:997-1003
Currently available materials for III–V multijunction solar cells lattice matched to GaAs covering the spectral range from 1.65 to 1.82 eV are composed of either immiscible quaternary alloys or contain aluminum. We report the fabrication of a novel
Publikováno v:
Solar Energy Materials and Solar Cells. 215:110653
We present a novel, low temperature approach to multijunction solar cell fabrication combining the high efficiency multi-junction concept with the low cost of thin film technology in one solar cell structure. The intermetallic bonding approach presen
Publikováno v:
Applied Physics Letters. 117:052103
InGaN/GaN multiple quantum well (MQW) structures currently used in optical devices are based on highly strained InGaN films. The presence of strain reduces quantum efficiency and indium incorporation, two critical parameters in addressing the green g