Výsledky vyhledávání - "Salah E.A. Elnahwy"

Second‐order non‐quasi‐static, compact model of field‐effect transistor revealing terminal rectification beyond their cutoff frequency

Autor: Nihal Y. Ibrahim, Salah E.A. Elnahwy, Ahmed B. Ayoub

Publikováno v: IET Circuits, Devices & Systems. 14:660-666

Recent applications in terahertz imaging, spectroscopy, and communications have been driving the need to increase the operation frequency of field-effect transistors (FETs). However, beyond their cutoff, FETs where recently shown to operate as a seco

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::6625bad894daef61a6fd8e54b671cb27
https://doi.org/10.1049/iet-cds.2019.0127

Zobrazit plný text záznamu

Simulation study for the use of transistor contacts for sub‐terahertz radiation detection

Autor: Salah E.A. Elnahwy, Nadia H. Rafat, Nihal Y. Ibrahim

Publikováno v: IET Microwaves, Antennas & Propagation. 10:784-790

Despite the increasing evidence that on-chip metallisation layer plays the role of an antenna in field effect transistor terahertz detectors, sufficient study and analysis of this role remain lacking. Three-dimensional (3D) simulation is used to stud

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::2ac0adaaf1fd0fde2055fc51fb5e6b91
https://doi.org/10.1049/iet-map.2015.0492

Zobrazit plný text záznamu

Multi-input intrinsic and extrinsic field effect transistor models beyond cutoff frequency

Autor: Nadia H. Rafat, Salah E.A. Elnahwy, Nihal Y. Ibrahim

Publikováno v: Solid-State Electronics. 103:236-241

This work expands the classical theory of operation of FETs beyond cutoff frequency. Using an electron drift transport model, the responsivity of a FET working in the linear region of operation within the semi-classical transport region is derived. D

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::a0f431414b1432960b5e7c05a4118278
https://doi.org/10.1016/j.sse.2014.07.006

Zobrazit plný text záznamu

Modeling of Field Effect Transistor Channel as a Nonlinear Transmission Line for Terahertz Detection

Autor: Nadia H. Rafat, Salah E.A. Elnahwy, Nihal Y. Ibrahim

Publikováno v: Journal of Infrared, Millimeter, and Terahertz Waves. 34:606-616

This paper revisits the theory of operation of field effect transistor in the extremely high frequency scale, where the analysis has gone beyond the conventional cutoff frequency of the transistor. In this range, which is typically the terahertz (THz

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::9759ca3a45c947c75b97c2d308c081ec
https://doi.org/10.1007/s10762-013-0009-0

Zobrazit plný text záznamu

An optimum base drift field for a p-n junction solar cell

Autor: Salah E.A. Elnahwy, Nabil Adeeb, Nadia H. Rafat

Publikováno v: Journal of Physics D: Applied Physics. 23:112-117

The concept of an optimum uniform drift field in the base region of a p-n junction single-crystal solar cell is presented. A comprehensive analytical treatment is given which takes into account the effect of variations of the material parameters, due

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::2b673d2a8d36fcd5e8ab46b3d105cd48
https://doi.org/10.1088/0022-3727/23/1/019

Zobrazit plný text záznamu

Drift transport model of field effect transistors in saturation beyond cutoff

Autor: Nihal Y. Ibrahim, Nadia H. Rafat, Salah E.A. Elnahwy

Publikováno v: Journal of Physics D: Applied Physics. 48:135102

Field effect transistors (FETs) can be used for Terahertz radiation detection beyond cutoff frequencies. Their operation in the linear regime of operation has been sufficiently modeled and analyzed. Unfortunately, this is not the case for FETs operat

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::fbbff9910d0a5fd9d189e9cbabe4ed5d
https://doi.org/10.1088/0022-3727/48/13/135102

Zobrazit plný text záznamu

Thin film polycrystalline Si p-n junction solar cells with preferential doping

Autor: Salah E.A. Elnahwy, N. Adeeb

Publikováno v: Solid-State Electronics. 25:1111-1117

A model has been introduced for a polycrystalline thin film silicon p-n junction solar cell with preferential doping along the grain boundaries. Detailed numerical calculations have been done for the effect of doping depths along the grain boundaries

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::d36d6305d2ffc45f88ba4886895c0b7d
https://doi.org/10.1016/0038-1101(82)90150-2

Zobrazit plný text záznamu

Analysis of the enhancement of the performance of a polysilicon solar cell due to simultaneous passivation of grain boundaries and back contact

Autor: Salah E.A. Elnahwy, N. Adeeb

Publikováno v: Solid-State Electronics. 31:1703-1709

The enhancements in the short circuit current, open circuit voltage and efficiency of an n+/p polysilicon solar cell due to simultaneous passivation of the grain boundaries and the back contact are studied analytically. The results show that these en

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::5c4e69ee8ed208f4e1e50352f6c3d62c
https://doi.org/10.1016/0038-1101(88)90067-6

Zobrazit plný text záznamu

Vyhledávací nástroje:

Upřesnit hledání