Výsledky vyhledávání - "Sakurai, Teruo"

Akademický článek

Depth distributions of defects and impurities in 100-keV B+ ion implanted silicon.

Autor: Akasaka, Youichi, Horie, Kazuo, Yoneda, Kiyoshi, Sakurai, Teruo, Nishi, Hidetoshi, Kawabe, Shoji, Tohi, Atsutomo

Publikováno v: Journal of Applied Physics; Jan1973, Vol. 44 Issue 1, p220-224, 5p

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Channeled‐ion implantation of group‐III and group‐V ions into silicon

Autor: Sakurai Teruo, H. Nishi, T. Furuya, Tsuguo Inada

Publikováno v: Journal of Applied Physics. 49:3918-3921

Implantation of group‐III and group‐V ions along [111] and [110] axes of silicon have been performed using a backscattering technique, and the depth profiles of implanted ions have been measured by the C‐V method. The range of channeled Ga ions

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::3ed51cfdcb19f11f43d177c179b20bf3
https://doi.org/10.1063/1.325399

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Uniform doping of channeled‐ion implantation

Autor: T. Hisatsugu, Hidetoshi Nishi, T. Furuya, Tsuguo Inada, Takao Kaneda, Sakurai Teruo

Publikováno v: Journal of Applied Physics. 49:608-613

This paper describes an apparatus designed to obtain spatial uniformity of channeled‐ion implantation using a parallel‐scanning system. Descriptions of the special sample holder which can be tilted in two directions and a detecting scheme for cha

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::e1c2a1e36bd7255bce461beb2b71b139
https://doi.org/10.1063/1.324687

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Lateral spread of P+ions implanted in silicon through the SiO2mask window

Autor: T. Hisatsugu, H. Hashimoto, T. Sato, Sakurai Teruo, H. Kawata, T. Furuya

Publikováno v: Journal of Applied Physics. 50:1287-1290

The lateral spread of implanted P+ ions and the shape of the mask window have been observed simultaneously using the technique of staining the cleaved surface and scanning electron microscopy for the Si samples with the SiO2 mask window with a tapere

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::1cebe3e22e2c20cd81ed57235b14b035
https://doi.org/10.1063/1.326159

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Depth distributions of defects and impurities in 100‐keV B+ ion implanted silicon

Autor: Sakurai Teruo, Atsutomo Tohi, Kiyoshi Yoneda, Shoji Kawabe, Kazuo Horie, Hidetoshi Nishi, Youichi Akasaka

Publikováno v: Journal of Applied Physics. 44:220-224

The depth distributions of boron atoms and of radiation‐induced defects are measured in the same set of silicon samples implanted with 100‐keV boron ions at room temperature to a dose of 1×1016/cm2, by utilizing the 11B(p,α)8 Be nuclear reactio

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::39935b30fa138984b3282b52a23d8fff
https://doi.org/10.1063/1.1661865

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