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Autor:
Kravchenko, S. V., Shashkin, A. A., Anissimova, S., Venkatesan, A., Sakr, M. R., Dolgopolov, V. T., Klapwijk, T. M.
Publikováno v:
Ann. Phys. 321, 1588 (2006)
We measure thermodynamic magnetization of a low-disordered, strongly correlated two-dimensional electron system in silicon. Pauli spin susceptibility is observed to grow critically at low electron densities - behavior that is characteristic of the ex
Externí odkaz:
http://arxiv.org/abs/cond-mat/0602526
A new fabrication technique is used to produce quantum dots with read-out channels in silicon/silicon-germanium two-dimensional electron gases. The technique utilizes Schottky gates, placed on the sides of a shallow etched quantum dot, to control the
Externí odkaz:
http://arxiv.org/abs/cond-mat/0504046
Autor:
Anissimova, S., Venkatesan, A., Shashkin, A. A., Sakr, M. R., Kravchenko, S. V., Klapwijk, T. M.
Publikováno v:
Phys. Rev. Lett. 96, 046409 (2006)
We measure the thermodynamic magnetization of a low-disordered, strongly correlated two-dimensional electron system in silicon in perpendicular magnetic fields. A new, parameter-free method is used to directly determine the spectrum characteristics (
Externí odkaz:
http://arxiv.org/abs/cond-mat/0503123
Autor:
Shashkin, A. A., Anissimova, S., Sakr, M. R., Kravchenko, S. V., Dolgopolov, V. T., Klapwijk, T. M.
We show that the Comment by Reznikov and Sivan (cond-mat/0410409) is erroneous because the authors do not distinguish between Pauli and Curie spin susceptibility.
Externí odkaz:
http://arxiv.org/abs/cond-mat/0410605
Autor:
Shashkin, A. A., Anissimova, S., Sakr, M. R., Kravchenko, S. V., Dolgopolov, V. T., Klapwijk, T. M.
Publikováno v:
Phys. Rev. Lett. 96, 036403 (2006)
Thermodynamic measurements reveal that the Pauli spin susceptibility of strongly correlated two-dimensional electrons in silicon grows critically at low electron densities - behavior that is characteristic of the existence of a phase transition.
Externí odkaz:
http://arxiv.org/abs/cond-mat/0409100
Publikováno v:
Phys. Rev. Lett. 91, 116402 (2003)
We have studied corrections to conductivity due to the coherent backscattering in low-disordered two-dimensional electron systems in silicon for a range of electron densities including the vicinity of the metal-insulator transition, where the dramati
Externí odkaz:
http://arxiv.org/abs/cond-mat/0210008
Publikováno v:
Phys. Rev. B 67, 081302(R) (2003)
We have measured compressibility of a two-dimensional hole gas in p-GaAs/AlGaAs heterostructure, grown on a (100) surface, in the presence of a tilted magnetic field. It turns out that the parallel component of magnetic field affects neither the spin
Externí odkaz:
http://arxiv.org/abs/cond-mat/0206068
Autor:
Sakr, M. R., Rahimi, Maryam, Kravchenko, S. V., Coleridge, P. T., Williams, R. L., Lapointe, J.
Publikováno v:
Phys. Rev. B 64, 161308(R) (2001)
We show that in dilute metallic p-SiGe heterostructures, magnetic field can cause multiple quantum Hall-insulator-quantum Hall transitions. The insulating states are observed between quantum Hall states with filling factors \nu=1 and 2 and, for the f
Externí odkaz:
http://arxiv.org/abs/cond-mat/0107171
Publikováno v:
Phys. Rev. B 65, 041303(R) (2002)
In non-interacting or weakly-interacting 2D electron systems, the energy of the extended states increases as the perpendicular magnetic field approaches zero: the extended states "float up" in energy, giving rise to an insulator. However, in those 2D
Externí odkaz:
http://arxiv.org/abs/cond-mat/0011523