AlGaN HEMT Structures Grown on Miscut Si(111) Wafers.

Autor: Sakharov, Alexei V.^1,2 (AUTHOR) val@beam.ioffe.ru, Arteev, Dmitri S.² (AUTHOR), Zavarin, Evgenii E.^1,2 (AUTHOR), Nikolaev, Andrey E.^1,2 (AUTHOR), Lundin, Wsevolod V.² (AUTHOR), Prasolov, Nikita D.² (AUTHOR), Yagovkina, Maria A.² (AUTHOR), Tsatsulnikov, Andrey F.¹ (AUTHOR), Fedotov, Sergey D.^3,4 (AUTHOR), Sokolov, Evgenii M.³ (AUTHOR), Statsenko, Vladimir N.³ (AUTHOR)

Publikováno v: Materials (1996-1944). Jun2023, Vol. 16 Issue 12, p4265. 11p.

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Superior color rendering with a phosphor-converted blue-cyan monolithic light-emitting diode

Autor: Titkov, Ilya E., Yadav, Amit, Karpov, Sergey Yu., Sakharov, Alexei V., Tsatsulnikov, Andrey F., Slight, Thomas J., Gorodetsky, Andrei, Rafailov, Edik U.

The future generation of modern illumination should not only be cheap and highly efficient, but also demonstrate high quality of light, light which allows better color differentiation and fidelity. Here we are presenting a novel approach to create a

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=core_ac_uk__::cd2567765aae336aabe72e3e2afe0429
https://publications.aston.ac.uk/id/eprint/29627/1/Phosphor_converted_blue_cyan_monolithic_light_emitting_diode.pdf

Formation of three-dimensional islands in the active region of InGaN based light emitting diodes using a growth interruption approach

Autor: Tsatsulnikov, Andrei F., Lundin, Wsevolod V., Sakharov, Alexei V., Nikolaev, Andrey E., Zavarin, E.E., Usov, S.O., Yagovkina, Maria A., Hÿtch, Martin, Korytov, Maxim, Cherkashin, Nikolay

Publikováno v: Science of advanced materials
Science of advanced materials, American Scientific Publishers, 2015, 7 (8), pp.1629-1635. 〈10.1166/sam.2015.2277〉
Science of advanced materials, 2015, 7 (8), pp.1629-1635. ⟨10.1166/sam.2015.2277⟩
Science of advanced materials, American Scientific Publishers, 2015, 7 (8), pp.1629-1635. ⟨10.1166/sam.2015.2277⟩

cited By 4; International audience; Here, we develop a technological approach to the formation of three-dimensional island-like structures in the active medium of InGaN/GaN based light emitting diodes with an enhanced efficiency with respect to refer

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e9587ec8d5121ad6ff0b07967d3c4b71
https://hal.archives-ouvertes.fr/hal-01721151/document