Zobrazeno 1 - 10
of 16
pro vyhledávání: '"Sajan Marokkey"'
Autor:
Thomas Muelders, Chi-Chun Liu, Derren N. Dunn, Jing Guo, Jaime D. Morillo, Kafai Lai, Wolfgang Demmerle, Cheng Chi, Hans-Jürgen Stock, Jing Sha, Balint Meliorisz, Ulrich Welling, Sajan Marokkey, Clifford Osborn
Publikováno v:
Advances in Patterning Materials and Processes XXXV.
This paper presents a design and technology co-optimization (DTCO) study of metal cut formation in the sub-20-nmregime. We propose to form the cuts by applying grapho-epitaxial directed self-assembly. The construction of a DTCO flow is explained and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e8ddd43a17936e0b25316dc3c05976ee
https://doi.org/10.1117/12.2297344
https://doi.org/10.1117/12.2297344
Autor:
Ulrich Klostermann, Obert Wood, Francis Goodwin, Yulu Chen, Sajan Marokkey, Xiangyu Zhou, Lei Sun, Mariya Braylovska
Publikováno v:
Photomask Technology.
Pellicles that satisfy transmission, emission, thermal, and mechanical requirements are highly desired for EUV high volume manufacturing. We present here the capability of integrating pellicles in the full flow of rigorous EUV lithography simulations
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d0826e58142ffea5bcf59c05d8e330d3
https://doi.org/10.1117/12.2280339
https://doi.org/10.1117/12.2280339
Autor:
Hans-Jürgen Stock, Ulrich Welling, Wolfgang Demmerle, Thomas Muelders, Chi-Chun Liu, Sajan Marokkey, Balint Meliorisz, Jing Guo, Cheng Chi, Kafai Lai
Publikováno v:
SPIE Proceedings.
Direct Optimization (DO) of a 3D DSA model is a more optimal approach to a DTCO study in terms of accuracy and speed compared to a Cahn Hilliard Equation solver. DO’s shorter run time (10X to 100X faster) and linear scaling makes it scalable to the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3c4a06f49a98a725ed3bac6599599336
https://doi.org/10.1117/12.2260379
https://doi.org/10.1117/12.2260379
Autor:
Yudhishthir Kandel, Gregory Denbeaux, Steven Grzeskowiak, Jonathan Chandonait, Qiliang Yan, Lawrence S. Melvin, Sajan Marokkey, Benjamin D. Painter
Publikováno v:
SPIE Proceedings.
Extreme ultraviolet (EUV) lithography at 13.5 nm stands at the crossroads of next generation patterning technology for high volume manufacturing of integrated circuits. Photo resist models that form the part of overall pattern transform model for lit
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::aef67b6c09b99791cae664752150d578
https://doi.org/10.1117/12.2258063
https://doi.org/10.1117/12.2258063
Autor:
Thomas Mülders, Hans-Jürgen Stock, Parul Dhagat, Wolfgang Demmerle, Sajan Marokkey, Ananthan Raghunathan, Kafai Lai, Balint Meliorisz
Publikováno v:
SPIE Proceedings.
In this paper, we study the impact of topographic guide or template properties on pattern formation in a directed self-assembly (DSA) process. In particular, we investigate the relationship between free energy and defect generation or process robustn
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f08fb0d9765efff552b6be2529fb657e
https://doi.org/10.1117/12.2219158
https://doi.org/10.1117/12.2219158
Autor:
Kenneth A. Goldberg, Mihir Upadhyaya, Il-Yong Jang, Thomas V. Pistor, Wolfgang Demmerle, Vibhu Jindal, Adarsh Basavalingappa, Iacopo Mochi, Sajan Marokkey, Jenah Harris-Jones, Gregory Denbeaux, Henry C. Herbol
Publikováno v:
SPIE Proceedings.
The availability of defect-free masks is considered to be a critical issue for enabling extreme ultraviolet lithography (EUVL) as the next generation technology. Since completely defect-free masks will be hard to achieve, it is essential to have a go
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ce8db8e180d14bedb25b41ee55de69ab
https://doi.org/10.1117/12.2175842
https://doi.org/10.1117/12.2175842
Autor:
Derren N. Dunn, Seiji Nakagawa, Yea-Sen Lin, Todd Bailey, Mohamed Talbi, Bidan Zhang, Takashi Murakami, Sajan Marokkey, Chandrasekhar Sarma, Dongbing Shao, Emily Gallagher
Publikováno v:
SPIE Proceedings.
To reduce cost, implant levels usually use masks fabricated with older generation mask tools, such as laser writers, which are known to introduce significant mask errors. In fact, for the same implant photolithography process, Optical Proximity Corre
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::45c72542bbd83166789183d4ab5059f3
https://doi.org/10.1117/12.865131
https://doi.org/10.1117/12.865131
Autor:
John Nickel, Derren N. Dunn, Masashi Fujimoto, Amr Abdo, Will Conley, Ramya Viswanathan, Mohamed Talbi, Sajan Marokkey, Si Hyeung Lee, Chandrasekhar Sarma, No Young Chung, Todd Bailey, Dongbing Shao
Publikováno v:
SPIE Proceedings.
In this paper, we report large scale three-dimensional photoresist model calibration and validation results for critical layer models that span 32 nm, 28 nm and 22 nm technology nodes. Although methods for calibrating physical photoresist models have
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::51f6b022597a2c3d86b10f3ab1a93e23
https://doi.org/10.1117/12.846466
https://doi.org/10.1117/12.846466
Autor:
Mohamed Talbi, Sajan Marokkey, Chandra Sarma, Derren N. Dunn, Will Conley, Todd Bailey, Amr Abdo
Publikováno v:
SPIE Proceedings.
In this paper we will demonstrate how a 3D physical patterning model can act as a forensic tool for OPC and ground-rule development. We discuss examples where the 2D modeling shows no issues in printing gate lines but 3D modeling shows severe resist
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bf64656be36ff34a2ec406d4dc9a09ba
https://doi.org/10.1117/12.846637
https://doi.org/10.1117/12.846637
Autor:
Edward W. Conrad, Vipin Madangarli, Taksh Bharat, Sajan Marokkey, Rakesh Kuncha, Omprakash Jaiswal, James A. Bruce
Publikováno v:
SPIE Proceedings.
Electrical validation of through process OPC verification limits in 32nm process technology is presented in this paper. Correlation plots comparing electrical and optical simulations are generated by weighting the probability of occurrence of each pr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::713920afdd53a732e92cde9a5852e392
https://doi.org/10.1117/12.846572
https://doi.org/10.1117/12.846572