Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Saisai He"'
Autor:
Ken Chen, Qiang Luo, Zongsheng Zhou, Saisai He, Bin Xi, Chenglong Jia, Hong-Gang Luo, Jize Zhao
Publikováno v:
New Journal of Physics, Vol 25, Iss 2, p 023006 (2023)
Skyrmions hold great promise in future spintronics applications since they are robust against local deformations. The meron, due to its topological equivalence to a half skyrmion, has been widely found to appear in pairs. Motivated by recent progress
Externí odkaz:
https://doaj.org/article/97a5a424ece24898864a577be03d4362
Publikováno v:
Journal of Spectroscopy, Vol 2021 (2021)
Monocrystalline silicon (c-Si) is still an important material related to microelectronics/optoelectronics. The nondestructive measurement of the c-Si material and its microstructure is commonly required in scientific research and industrial applicati
Externí odkaz:
https://doaj.org/article/2d753deebc324f8b9dad9ddb5833df44
Autor:
Ying Chang, Aixia Xiao, Rubing Li, Miaojing Wang, Saisai He, Mingyuan Sun, Lizhong Wang, Chuanyong Qu, Wei Qiu
Publikováno v:
Crystals, Vol 11, Iss 6, p 626 (2021)
Raman spectroscopy is an indispensable method for the nondestructive testing of semiconductor materials and their microstructures. This paper presents a study on the angle-resolved intensity of polarized micro-Raman spectroscopy for a 4H silicon carb
Externí odkaz:
https://doaj.org/article/268bfe0254d7455f953d50296be358be
Publikováno v:
Materials; Volume 16; Issue 6; Pages: 2255
Experimental characterization of the in-plane stress tensor is a basic requirement for the development of GaN strain engineering. In this work, a theoretical model of stress characterization for GaN using polarized micro-Raman spectroscopy was develo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::185ae33187f920a2b871aa70c6ead665
Publikováno v:
Materials; Volume 15; Issue 13; Pages: 4616
Micro Raman spectroscopy is an effective method to quantitatively analyse the internal stress of semiconductor materials and structures. However, the decoupling analysis of the stress components for {100} monocrystalline silicon (c-Si) remains diffic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f00c8f1fddd36767ae4e20abbc1bc811
https://doi.org/10.3390/ma15134616
https://doi.org/10.3390/ma15134616
Autor:
Mingyuan Sun, Saisai He, Li Rubing, Aixia Xiao, Lizhong Wang, Chang Ying, Wei Qiu, Miaojing Wang, Chuanyong Qu
Publikováno v:
Crystals, Vol 11, Iss 626, p 626 (2021)
Crystals
Volume 11
Issue 6
Crystals
Volume 11
Issue 6
Raman spectroscopy is an indispensable method for the nondestructive testing of semiconductor materials and their microstructures. This paper presents a study on the angle-resolved intensity of polarized micro-Raman spectroscopy for a 4H silicon carb
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6d0ce514c5c1f480fcfb9b99415b2db2
https://doi.org/10.3390/cryst11060626
https://doi.org/10.3390/cryst11060626