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The present study reports Al induced crystallization (AIC) of amorphous (a)-SiGe in Al-Ge-Si ternary system at low temperature ~ 350 degree C. In addition to crystallization, the isothermal annealing of a-SiGe/AlOx/Al/corning-glass (CG) structure was
Externí odkaz:
http://arxiv.org/abs/1905.02986
Publikováno v:
In Materials Chemistry and Physics 15 January 2021 258
Autor:
Sain, Twisha, Kishan Singh, Ch., Amaladass, E.P., Abhirami, S., Ilango, S., Mathews, T., Mani, Awadhesh
Publikováno v:
In Materials Letters 1 October 2021 300