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pro vyhledávání: '"Sain, Deepak"'
We show that the tunable gate voltage in n-doped AlGaAs/GaAs QW (quantum well) is a key in designing an efficient and ultrafast MRAM (magnetoresistive random access memory). The Rashba spin-orbit coupling in such QWs can be tuned appropriately by the
Externí odkaz:
http://arxiv.org/abs/2305.08565
Autor:
Gupta, Amit Kumar, Sain, Deepak
Publikováno v:
2013 International Conference on Green Computing, Communication & Conservation of Energy (ICGCE); 2013, p291-295, 5p
Autor:
Yadav, Sonu, Sain, Deepak
Publikováno v:
2013 International Conference on Green Computing, Communication & Conservation of Energy (ICGCE); 2013, p159-163, 5p
Publikováno v:
International Journal of Advanced Research in Computer Science; Jul2011, Vol. 2 Issue 4, p230-234, 5p