Zobrazeno 1 - 10
of 16
pro vyhledávání: '"Saied Tadayon"'
Autor:
Saied Tadayon, Bijan Tadayon
Publikováno v:
Studies in Fuzziness and Soft Computing ISBN: 9783319063225
In this chapter, we present a method for approximate evaluation of Zadeh’s Z-numbers using category sets of probability distributions corresponding to similar certainty measures.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3310387b2ef1beb7e10a760746eba45c
https://doi.org/10.1007/978-3-319-06323-2_8
https://doi.org/10.1007/978-3-319-06323-2_8
Publikováno v:
IEEE Microwave and Guided Wave Letters. 4:241-243
A high-performance integrated source module using a U-band MMIC HBT DRO and a U-hand MMIC MESFET power amplifier in conjunction with a W-band MMIC high-efficiency varactor doubler has been developed for millimeter-wave system applications. This paper
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::692a4acc94ca9c7caa3ad7ffd22d3e56
https://doi.org/10.1109/75.298253
https://doi.org/10.1109/75.298253
Publikováno v:
IEEE Microwave and Guided Wave Letters. 4:50-52
A 46.3 GHz dielectric resonator stabilized oscillator (DRO) using AlGaAs/GaAs heterojunction bipolar transistor (HBT) and monolithic microwave integrated circuit (MMIC) technology has been designed, fabricated, and characterized. The oscillator exhib
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::388ad9478b881a08e05940f24fb4fcce
https://doi.org/10.1109/75.267714
https://doi.org/10.1109/75.267714
Autor:
J. Kearney, T.T. Lee, J.L. Singer, P. Laux, J.F. Bass, Saied Tadayon, O.A. Aina, H.C. Huang, S.W. Chen
Publikováno v:
Proceedings of 1994 IEEE Microwave and Millimeter-Wave Monolithic Circuits Symposium.
A 94-GHz multifunction monolithic microwave integrated circuit (MMIC) incorporating two different materials on the same chip has been developed. This MMIC contains a three-stage pseudomorphic high-electron mobility transistor (P-HEMT) low-noise ampli
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dff8deefab680ff8ad6ade6bdcc0e76a
https://doi.org/10.1109/mcs.1994.332147
https://doi.org/10.1109/mcs.1994.332147
Publikováno v:
Journal of Applied Physics. 67:589-591
Si‐doped GaAs layers were grown by the migration‐enhanced epitaxy (MEE) method and by the conventional molecular‐beam epitaxy (MBE) method, for the substrate temperatures between 220 and 670 °C. For the layers grown below 400 °C, the Si activ
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5fe98a5c3fb62c16a001059e9b7c70f4
https://doi.org/10.1063/1.345202
https://doi.org/10.1063/1.345202
Autor:
Saied Tadayon, Fatima Salete Correra
Publikováno v:
1993 23rd European Microwave Conference.
The Gummel-Poon model implemented in commercial simulators was modified to generate a large-signal model for HBTs. A representation of the thermal effects associated with the DC power dissipated by the device was added to the model and the forward tr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c8279535bc530093d22c9cd656dbceb9
https://doi.org/10.1109/euma.1993.336799
https://doi.org/10.1109/euma.1993.336799
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 13:1
We have investigated different metal contacts (Cr/Au, Ti/Pt/Au, and Au) on p‐type GaSb, grown by the molecular beam epitaxy. For Au contacts, specific contact resistivities in the range of 1.4×10−8–7.8×10−8 Ω cm2 have been obtained. These
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::846c75b4126bb9046e17f5d56bc85878
https://doi.org/10.1116/1.587979
https://doi.org/10.1116/1.587979
Publikováno v:
Electronics Letters. 28:1261
A novel process, using standard thin film and optical lithography techniques, has been demonstrated which is capable of yielding linewidths considerably below 0.25 μm. Furthermore, inherent in this selfaligned process is the formation of high aspect
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4c106e57875616e436a47b176cf064e1
https://doi.org/10.1049/el:19920797
https://doi.org/10.1049/el:19920797
Autor:
L.F. Eastman, J. G. Zhu, Bijan Tadayon, Michael G. Spencer, G. L. Harris, Saied Tadayon, J. Griffin
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 8:131
In this work, a novel method for the growth of good quality GaAs at extremely low substrate temperatures (as low as 120 °C) is introduced. This novel method is based on three different methods: The migration‐enhanced epitaxy method, the indium dop
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cc3f17ab18e93eac2143e141526e1650
https://doi.org/10.1116/1.584839
https://doi.org/10.1116/1.584839
Autor:
G. L. Harris, Saied Tadayon, Paul J. Tasker, L.F. Eastman, William J. Schaff, C. E. C. Wood, Michael G. Spencer, Bijan Tadayon
Publikováno v:
Applied Physics Letters. 55:59-61
Be‐doped GaAs layers were grown by the migration‐enhanced epitaxy (MEE) method at 300 °C. The MEE layers showed practically no electrical activation. Rapid thermal annealing on the MEE layers resulted in mobility and hole concentration comparabl
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::febf9b9c2ece57753abacecf011446a9
https://doi.org/10.1063/1.101753
https://doi.org/10.1063/1.101753