Zobrazeno 1 - 10
of 50
pro vyhledávání: '"Saied Tadayon"'
Autor:
Saied Tadayon, Bijan Tadayon
Publikováno v:
Studies in Fuzziness and Soft Computing ISBN: 9783319063225
In this chapter, we present a method for approximate evaluation of Zadeh’s Z-numbers using category sets of probability distributions corresponding to similar certainty measures.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3310387b2ef1beb7e10a760746eba45c
https://doi.org/10.1007/978-3-319-06323-2_8
https://doi.org/10.1007/978-3-319-06323-2_8
Publikováno v:
IEEE Microwave and Guided Wave Letters. 4:241-243
A high-performance integrated source module using a U-band MMIC HBT DRO and a U-hand MMIC MESFET power amplifier in conjunction with a W-band MMIC high-efficiency varactor doubler has been developed for millimeter-wave system applications. This paper
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::692a4acc94ca9c7caa3ad7ffd22d3e56
https://doi.org/10.1109/75.298253
https://doi.org/10.1109/75.298253
Publikováno v:
IEEE Microwave and Guided Wave Letters. 4:50-52
A 46.3 GHz dielectric resonator stabilized oscillator (DRO) using AlGaAs/GaAs heterojunction bipolar transistor (HBT) and monolithic microwave integrated circuit (MMIC) technology has been designed, fabricated, and characterized. The oscillator exhib
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::388ad9478b881a08e05940f24fb4fcce
https://doi.org/10.1109/75.267714
https://doi.org/10.1109/75.267714
Autor:
J. Kearney, T.T. Lee, J.L. Singer, P. Laux, J.F. Bass, Saied Tadayon, O.A. Aina, H.C. Huang, S.W. Chen
Publikováno v:
Proceedings of 1994 IEEE Microwave and Millimeter-Wave Monolithic Circuits Symposium.
A 94-GHz multifunction monolithic microwave integrated circuit (MMIC) incorporating two different materials on the same chip has been developed. This MMIC contains a three-stage pseudomorphic high-electron mobility transistor (P-HEMT) low-noise ampli
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dff8deefab680ff8ad6ade6bdcc0e76a
https://doi.org/10.1109/mcs.1994.332147
https://doi.org/10.1109/mcs.1994.332147
Publikováno v:
Journal of Applied Physics. 67:589-591
Si‐doped GaAs layers were grown by the migration‐enhanced epitaxy (MEE) method and by the conventional molecular‐beam epitaxy (MBE) method, for the substrate temperatures between 220 and 670 °C. For the layers grown below 400 °C, the Si activ
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5fe98a5c3fb62c16a001059e9b7c70f4
https://doi.org/10.1063/1.345202
https://doi.org/10.1063/1.345202
Autor:
Saied Tadayon, Fatima Salete Correra
Publikováno v:
1993 23rd European Microwave Conference.
The Gummel-Poon model implemented in commercial simulators was modified to generate a large-signal model for HBTs. A representation of the thermal effects associated with the DC power dissipated by the device was added to the model and the forward tr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c8279535bc530093d22c9cd656dbceb9
https://doi.org/10.1109/euma.1993.336799
https://doi.org/10.1109/euma.1993.336799
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 13:1
We have investigated different metal contacts (Cr/Au, Ti/Pt/Au, and Au) on p‐type GaSb, grown by the molecular beam epitaxy. For Au contacts, specific contact resistivities in the range of 1.4×10−8–7.8×10−8 Ω cm2 have been obtained. These
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::846c75b4126bb9046e17f5d56bc85878
https://doi.org/10.1116/1.587979
https://doi.org/10.1116/1.587979