Zobrazeno 1 - 10
of 65
pro vyhledávání: '"Saied N. Tehrani"'
Autor:
G. Steiner, Kenneth H. Smith, Mark F. Deherrera, Gregory W. Grynkewich, Srinivas V. Pietambaram, Jijun Sun, Renu W. Dave, J.M. Slaughter, B. Craigo, Johan Åkerman, Saied N. Tehrani
Publikováno v:
IEEE Transactions on Magnetics. 42:1935-1939
We report the first demonstration of a magnetoresistive random access memory (MRAM) circuit incorporating MgO-based magnetic tunnel junction (MTJ) material for higher performance. We compare our results to those of AlOx-based devices, and we discuss
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::83e2cec194357cf2b9b0e9f17a7341fc
https://doi.org/10.1109/tmag.2006.877743
https://doi.org/10.1109/tmag.2006.877743
Autor:
Mark A. Durlam, Jijun Sun, Mark F. Deherrera, Renu W. Dave, Gregory W. Grynkewich, Srinivas V. Pietambaram, Johan Åkerman, J.M. Slaughter, Kenneth H. Smith, Bradley N. Engel, Saied N. Tehrani, N. D. Rizzo, Brian R. Butcher, Jason Allen Janesky
Publikováno v:
IEEE Transactions on Magnetics. 41:132-136
A 4-Mb magnetoresistive random access memory (MRAM) with a novel magnetic bit cell and toggle switching mode is presented. The circuit was designed in a five level metal, 0.18-mum complementary metal-oxide-semiconductor process with a bit cell size o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::789b241ceda36f221bc524eaeeae684f
https://doi.org/10.1109/tmag.2004.840847
https://doi.org/10.1109/tmag.2004.840847
Autor:
Brian R. Butcher, Mark F. Deherrera, Johan Åkerman, Jon M. Slaughter, M. Durlam, Gregory W. Grynkewich, Renu W. Dave, J. J. Sun, Srinivas V. Pietambaram, Bradley N. Engel, N. D. Rizzo, Saied N. Tehrani, Jason Allen Janesky, P. Brown, Kenneth H. Smith
Publikováno v:
Scopus-Elsevier
Magnetoresistive random-access memory (MRAM) is a new memory technology that is nearing commercialization. MRAM integrates a magnetic tunnel junction (MTJ) device with standard silicon-based microelectronics, resulting in a combination of qualities n
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::37838f923200481aa7ceb84c1fce4c92
https://doi.org/10.1557/mrs2004.234
https://doi.org/10.1557/mrs2004.234
Autor:
Saied N. Tehrani, B.N. Engel, J. Salter, Jon M. Slaughter, J. Janesky, M. DeHerrera, Gregory W. Grynkewich, K. Smith, Brian R. Butcher, Nicholas D. Rizzo, M. Durlam, Renu W. Dave
Publikováno v:
Proceedings of the IEEE. 91:703-714
Magnetoresistive random access memory (MRAM) technology combines a spintronic device with standard silicon-based microelectronics to obtain a combination of attributes not found in any other memory technology. Key attributes of MRAM technology are no
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fe0aa7f811f8cfdf98a26845297b7c07
https://doi.org/10.1109/jproc.2003.811804
https://doi.org/10.1109/jproc.2003.811804
Autor:
B.N. Engel, W.A. Feil, Gregory W. Grynkewich, Brian R. Butcher, Jon M. Slaughter, M. DeHerrera, Clarence J. Tracy, K. Smith, J. Ren, Kelly W. Kyler, J. Calder, J. Molla, A. Omair, Saied N. Tehrani, M. Durlam, P.J. Naji, Nicholas D. Rizzo, R. Williams
Publikováno v:
IEEE Journal of Solid-State Circuits. 38:769-773
A low-power 1-Mb magnetoresistive random access memory (MRAM) based on a one-transistor and one-magnetic tunnel junction (1T1MTJ) bit cell is demonstrated. This is the largest MRAM memory demonstration to date. In this circuit, the magnetic tunnel ju
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::10aa35f3be7f7a6b90079739736eb6bb
https://doi.org/10.1109/jssc.2003.810048
https://doi.org/10.1109/jssc.2003.810048
Autor:
Jon M. Slaughter, Renu W. Dave, J. Janesky, M. DeHerrera, B.N. Engel, Saied N. Tehrani, M. Durlam, Nicholas D. Rizzo
Publikováno v:
IEEE Transactions on Nanotechnology. 1:32-38
Rapid advances in portable communication and computing systems are creating an increasing demand for nonvolatile random access memory that is both high-density and highspeed. Existing solid-state technologies are unable to provide all of the needed a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1c2957b989297f6b592c3ef1a957f884
https://doi.org/10.1109/tnano.2002.1005424
https://doi.org/10.1109/tnano.2002.1005424
Autor:
Jon M. Slaughter, M. DeHerrera, Saied N. Tehrani, M. Durlam, Renu W. Dave, B.N. Engel, Nicholas D. Rizzo, J. Janesky
Publikováno v:
Journal of Superconductivity: Incorporating Novel Magnetism. 15:19-25
Developments in portable communication and computing systems are creating a growing demand for nonvolatile random access memory that is dense and fast. None of the existing solid-state memories can provide all the needed attributes in a single memory
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::242bdf998d6f026375beaa2ea4b5c72a
https://doi.org/10.1023/a:1014018925270
https://doi.org/10.1023/a:1014018925270
Autor:
S. V. Pendharkar, Gloria J. Kerszykowski, D. J. Resnick, S. B. Clemens, M. Durlam, Saied N. Tehrani, Kelly W. Kyler, H. Tompkins
Publikováno v:
Microelectronic Engineering. 53:367-370
The continued growth in communications has increased the need for non-volatile memories. One particular approach is magnetoresistive random access memory (MRAM). Because there is no wear-out mechanism, read/write endurance is virtually unlimited, mak
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4dd982d77e2b7bfc4da6e2ff87492dc4
https://doi.org/10.1016/s0167-9317(00)00335-x
https://doi.org/10.1016/s0167-9317(00)00335-x
Autor:
M. Durlam, Bradley N. Engel, M. DeHerrera, Eugene Youjun Chen, Jon M. Slaughter, J. Janesky, Saied N. Tehrani, Peter K. Naji, J. Calder, Renu Whig
Publikováno v:
IEEE Transactions on Magnetics. 36:2752-2757
We summarize our progress on Magnetoresistive Random Access Memory (MRAM) based on Magnetic Tunnel Junctions (MTJ). We have demonstrated MTJ material in the 1-1000 k/spl Omega/-/spl mu/m/sup 2/ range with MR values above 40%. The switching characteri
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2ea6727f7d0dc7a418e74fdbcf1d8444
https://doi.org/10.1109/20.908581
https://doi.org/10.1109/20.908581
Publikováno v:
Journal of Magnetism and Magnetic Materials. :251-254
One-micron patterned arrays of 200 A thick NiFeCo elements show an interesting switching anomaly. Depending on the starting field of a hysteresis loop, Hm, magnetization reversal can occur at one or two well-defined fields. The fraction of the elemen
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::765c55fadae027837bdaef193faddaec
https://doi.org/10.1016/s0304-8853(98)01097-x
https://doi.org/10.1016/s0304-8853(98)01097-x