Zobrazeno 1 - 10
of 32
pro vyhledávání: '"Saidjafarzoda Ilhom"'
Autor:
Hossain, Mohammad Ismail, Saleque, Ahmed M., Ahmed, Safayet, Saidjafarzoda, Ilhom, Shahiduzzaman, Md., Qarony, Wayesh, Knipp, Dietmar, Biyikli, Necmi, Tsang, Yuen Hong
Publikováno v:
In Nano Energy January 2021 79
Autor:
Saidjafarzoda Ilhom, Adnan Mohammad, John Grasso, Brian G. Willis, Ali K. Okyay, Necmi Biyikli
Publikováno v:
ACS Applied Electronic Materials. 5:335-343
Autor:
Saidjafarzoda Ilhom, Necmi Biyikli, Jasna Jankovic, Yair Ein-Eli, Andres O. Godoy, Pablo Zarama, Mor Kattan
Publikováno v:
ECS Transactions. 104:29-43
Autor:
Adnan Mohammad, Krishna D. Joshi, Dhan Rana, Saidjafarzoda Ilhom, Barrett Wells, Brian Willis, Boris Sinkovic, A. K. Okyay, Necmi Biyikli
Publikováno v:
Journal of Vacuum Science & Technology A. 41:032405
Vanadium oxide (VOx) compounds feature various polymorphs, including V2O5 and VO2, with attractive temperature-tunable optical and electrical properties. However, to achieve the desired material property, high-temperature post-deposition annealing of
Autor:
Necmi Biyikli, John Grasso, Saidjafarzoda Ilhom, Ali Kemal Okyay, Deepa Shukla, Brian G. Willis, Adnan Mohammad
Publikováno v:
ACS Applied Materials & Interfaces. 13:8538-8551
We report on the low-temperature growth of crystalline Ga2O3 films on Si, sapphire, and glass substrates using plasma-enhanced atomic layer deposition (PEALD) featuring a hollow-cathode plasma source. Films were deposited by using triethylgallium (TE
Autor:
Adnan Mohammad, Krishna Joshi, Saidjafarzoda Ilhom, John Grasso, Barrett Wells, Brian G Willis, Ali Okyay, Necmi Biyikli
Publikováno v:
ECS Meeting Abstracts. :1128-1128
The two main polymorphs of boron nitride are hexagonal (h-BN) and cubic (c-BN) phases and both show attractive material properties to be employed under extreme environments. h-BN is also known as “white graphene” due to the matching hexagonal cry
Autor:
Saidjafarzoda Ilhom, Adnan Mohammad, Peter Chardavoyne, Sofia Abdari, Dominic Zacharzewski, Martin Niemiec, Necmi Biyikli
Publikováno v:
ECS Meeting Abstracts. :1116-1116
Electrical and Optical Properties of P-type NiO Films Grown via Nickelocene Precursor in a Hollow-Cathode Plasma-ALD Reactor In contrast to the relative abundance of as-grown unintentionally doped n-type semiconductor materials, there are only a few
Publikováno v:
Journal of Vacuum Science & Technology A. 40:042401
In this work, surface reactions during the atomic layer doping (ALDp) process of aluminum-doped zinc oxide (AZO) films have been studied. Conventional supercycle and alternative quasi-simultaneous codosing methods are analyzed within the 100–200 °
Autor:
Saidjafarzoda, Ilhom, Adnan, Mohammad, Deepa, Shukla, John, Grasso, Brian G, Willis, Ali Kemal, Okyay, Necmi, Biyikli
Publikováno v:
ACS applied materialsinterfaces. 13(7)
We report on the low-temperature growth of crystalline Ga