Výsledky vyhledávání - "Saida Mellal"

Obtaining Directly Quasi-Square Open Ring FSS Constitutive Effective Parameters by Using Coupled WCIP - Retrieval Method

Autor: Badreddine Zemmal, Azizi Cherifa, Henri Baudrand, Ilhem Touaibia, Saida Mellal, Khalid Hati, Toufik Ziar, Hichem Farh

Publikováno v: Defect and Diffusion Forum. 397:187-199

We propose here a method witch analyze the behavior of Quasi-square open ring frequency selective surface (FSS) by using an approach based on the wave iterative concept procedure method (WCIP) coupled to Retrieval from Scattering Parameters method .

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::749dbdd5efc0469be690b7848e7af753
https://doi.org/10.4028/www.scientific.net/ddf.397.187

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The Study of the Miniaturisation Effect on the Characteristics of Patch Antenna Using the WCIP Method

Autor: Hichem Farh, Saida Mellal, Cherifa Azizi, Toufik Ziar, Mourad Zaabat

Publikováno v: Journal of New Technology and Materials. 4:53-57

The demand of miniature electronic systems has been increasing for several decades. The physical size of systems is reduced due to advancements in integrated circuits. With reduction in size of electronic systems, there is also an increasing demand o

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::7f5d719a41e3699adb82580f9ba79205
https://doi.org/10.12816/0010300

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Influence of the Edge Effects on the MESFET Transistor Characteristics

Autor: Toufik Ziar, Mourad Zaabat, Azizi Ch., Saida Mellal

Publikováno v: Journal of New Technology and Materials. 4:33-37

A two-dimensional numerical analysis is presented to investigate the field effect transistor characteristics, Our main aim in these sheet related on the one hand to the optimization of a two dimensional (2D) analytical model for the static characteri

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::cae632d3dd6f88bfb329818aa63912b2
https://doi.org/10.12816/0010329

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A Comprehensive Nonlinear Model for GaAs MESFET Transistor

Autor: Mounir Azizi, Toufik Ziar, Saida Mellal, Mourad Zaabat, Chahrazed Kaddour, Cherifa Azizi

Publikováno v: Journal of New Technology and Materials. 3:12-17

An analytical two-dimensional (2D) model to accurately predict the channel potential and electric field distribution in sub-micron GaAs MESFET based on (2D) analytical solution of Poisson's equation using superposition principle is presented. The res

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::0c73ab54b0bdaa5adead39dad858ba11
https://doi.org/10.12816/0010273

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