Zobrazeno 1 - 10
of 54
pro vyhledávání: '"Saida Latreche"'
Autor:
Billel Smaani, Yacin Meraihi, Fares Nafa, Mohamed Salah Benlatreche, Hamza Akroum, Saida Latreche
Publikováno v:
International Journal of Electronics and Telecommunications, Vol vol. 67, Iss No 4, Pp 609-614 (2021)
This paper deals with the implementation of a DC and AC double-gate MOSFET compact model in the Verilog- AMS language for the transient simulation and the configuration of ultra low-power analog circuits. The Verilog-AMS description of the proposed m
Externí odkaz:
https://doaj.org/article/801d92be4f4a4a41bea17e5acb0cfa05
Autor:
Manel Bouhouche, Saida Latreche
Publikováno v:
Electronics, Vol 25, Iss 2, Pp 57-64 (2021)
This paper analyzes the single event transient (SET) response of low noise amplifier (LNA) designed using SiGe heterojunction bipolar transistors (HBT). To verify the radiation tolerance of the proposed LNA, a total of four cascode configurations wer
Externí odkaz:
https://doaj.org/article/ae4b883f1e304a9e8f1a5a70e18b9de4
Publikováno v:
Frontiers in Physics, Vol 10 (2022)
A design modification to an existing 3D-trenched pixel detector is proposed, aimed at an improved fabrication yield. The device concept is studied and its performance is evaluated by TCAD simulations, in comparison to the existing one. Although the m
Externí odkaz:
https://doaj.org/article/f7fb0e3b8c254e36a3383608c2ffedcb
Autor:
Samir Labiod, Billel Smaani, Shubham Tayal, Shiromani Balmukund Rahi, Hichem Sedrati, Saida Latreche
Publikováno v:
Silicon. 15:1181-1191
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d2da6ebf4fa8934b9aa209e17f1b782b
https://doi.org/10.1007/s12633-022-02081-z
https://doi.org/10.1007/s12633-022-02081-z
Publikováno v:
Russian Microelectronics. 51:192-198
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b18530f74f358538d096d74a81b37fc0
https://doi.org/10.1134/s1063739722010036
https://doi.org/10.1134/s1063739722010036
Publikováno v:
International Journal of Circuits, Systems and Signal Processing. 15:1394-1399
In this paper, we propose an analytical drain-current model for long-channel junctionless (JL) cylindrical surrounding-gate MOSFET (SRG MOSFET). It is based on surface-potential solutions obtained from Poisson’s equation using some approximations a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d8d14cb8f5ae128e1cfbb8822486ad5d
https://doi.org/10.46300/9106.2021.15.149
https://doi.org/10.46300/9106.2021.15.149
Publikováno v:
IEEE Transactions on Electron Devices. 68:479-484
This article focuses on the reduction of the self-heating (SH) effect in an advanced SiGe hetero-junction bipolar transistor (HBT) considering the Peltier effect. Bismuth Telluride is the working material for most Peltier cooling devices and thermoel
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f08d50cfaa5226ce575ef15cde99f5e5
https://doi.org/10.1109/ted.2020.3044869
https://doi.org/10.1109/ted.2020.3044869
Publikováno v:
2022 19th International Multi-Conference on Systems, Signals & Devices (SSD).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e4eb3acb6484bdb669ff2a6931cdf36c
https://doi.org/10.1109/ssd54932.2022.9955656
https://doi.org/10.1109/ssd54932.2022.9955656
Autor:
Mohamed El Amine Benkechkache, Gian-Franco Dalla Betta, Lucio Pancheri, Saida Latreche, Lamis Ghoualmi
Publikováno v:
2021 Fourth International Conference on Microelectronics, Signals & Systems (ICMSS).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f05b1b1a0d26d8848cb2845a16af33f0
https://doi.org/10.1109/icmss53060.2021.9673596
https://doi.org/10.1109/icmss53060.2021.9673596
Publikováno v:
2021 International Conference on Engineering and Emerging Technologies (ICEET).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5ccc1398aff7d7dc7f5bc148c95868cd
https://doi.org/10.1109/iceet53442.2021.9659679
https://doi.org/10.1109/iceet53442.2021.9659679