Zobrazeno 1 - 10
of 48
pro vyhledávání: '"Said Hassani"'
Autor:
Bruno Masenelli, Karine Masenelli-Varlot, Christèle Vilar, Corinne Sartel, Alain Lusson, Christophe Arnold, P. Galtier, Said Hassani, Julien Barjon, Gaëlle Amiri, Vincent Sallet
Publikováno v:
physica status solidi (RRL)-Rapid Research Letters
physica status solidi (RRL)-Rapid Research Letters, Wiley-VCH Verlag, 2020, pp.2000037. ⟨10.1002/pssr.202000037⟩
physica status solidi (RRL)-Rapid Research Letters, 2020, pp.2000037. ⟨10.1002/pssr.202000037⟩
physica status solidi (RRL)-Rapid Research Letters, Wiley-VCH Verlag, 2020, pp.2000037. ⟨10.1002/pssr.202000037⟩
physica status solidi (RRL)-Rapid Research Letters, 2020, pp.2000037. ⟨10.1002/pssr.202000037⟩
International audience
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::570aa4306041fa8b3e4bd62e04fb9223
https://hal.archives-ouvertes.fr/hal-02615169/document
https://hal.archives-ouvertes.fr/hal-02615169/document
Autor:
Alain Lusson, Christophe Delerue, François Jomard, Bruno Masenelli, P. Galtier, I. Lefebvre, Christèle Vilar, Corinne Sartel, Mohamed K. Hamza, Bruno Canut, Gaëlle Amiri, Said Hassani, Vincent Sallet
Publikováno v:
Crystal Growth & Design. 18:4287-4295
The metal–organic chemical vapor deposition growth of various Ga-doped ZnO nanostructures for plasmonics is investigated, with a particular focus on the nanowire facet transformations induced by the addition of trimethylgallium in the gas phase. Fo
Publikováno v:
Lecture Notes of the Institute for Computer Sciences, Social Informatics and Telecommunications Engineering ISBN: 9783030160418
AFRICOMM
AFRICOMM
This paper proposes an optimised method to supervise free roaming calls. Since November 28th, 2016, West African countries and members of the Economic Community of West African States (ECOWAS) have decided to ban roaming charges among mobile phone us
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7493346e9a5c6a959bcb5e2190577a61
https://doi.org/10.1007/978-3-030-16042-5_8
https://doi.org/10.1007/978-3-030-16042-5_8
Publikováno v:
Applied Physics Letters
Applied Physics Letters, American Institute of Physics, 2018, 113 (22), pp.222103. ⟨10.1063/1.5054685⟩
Applied Physics Letters, American Institute of Physics, 2018, 113 (22), pp.222103. ⟨10.1063/1.5054685⟩
Coaxially periodic ZnO/ZnMgO core-multishell nanowire (NW) heterostructures were grown via a metal organic chemical vapor deposition method. We investigated their electrical properties via the application of two locally resolved electrical scanning p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5f9e826973014449a8afb7ea1e450e54
https://hal.archives-ouvertes.fr/hal-02072861/document
https://hal.archives-ouvertes.fr/hal-02072861/document
Autor:
Vincent Sallet, Corinne Sartel, Said Hassani, Amiri, G., Alain Lusson, Galtier P, Isabelle Lefebvre, Christophe Delerue, Bruno Masenelli
Publikováno v:
TCM2018
TCM2018, Oct 2018, Crete, Greece
HAL
TCM2018, Oct 2018, Crete, Greece
HAL
International audience
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::d669255f4738e3605894671b2a6107a1
https://hal.archives-ouvertes.fr/hal-02010197
https://hal.archives-ouvertes.fr/hal-02010197
Autor:
François Jomard, Said Hassani, Christian Morhain, J. Chevallier, I. Stenger, Jean-Michel Chauveau, N. Temahuki, Julien Barjon, Alain Lusson
Publikováno v:
Applied Physics Letters
Applied Physics Letters, American Institute of Physics, 2021, 118 (10), ⟨10.1063/5.0044373⟩
Applied Physics Letters, American Institute of Physics, 2021, 118 (10), ⟨10.1063/5.0044373⟩
International audience; Deuterium diffusion is investigated in nitrogen-doped homoepitaxial ZnO layers. The samples were grown under slightly Zn-rich growth conditions by plasma-assisted molecular beam epitaxy on m-plane ZnO substrates and have a nit
Publikováno v:
physica status solidi c. 13:564-567
ZnO nanowires have been grown by metalorganic chemical vapor deposition on sapphire substrates. The use of N2O and DEZn as oxygen and zinc precursors combined with high temperature leads to the spontaneous growth of vertical ZnO nanowires (NWs) on un
Autor:
Vincent Sallet, Corinne Sartel, Said Hassani, Amiri, G., Alain Lusson, Galtier P, Isabelle Lefebvre, Christophe Delerue, Bruno Masenelli
Publikováno v:
IWZnO 2018
IWZnO 2018, Sep 2018, varsovie, Poland
HAL
IWZnO 2018, Sep 2018, varsovie, Poland
HAL
International audience
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::c1f1bba59b0e4e7c695cad0898e49615
https://hal.archives-ouvertes.fr/hal-02010195
https://hal.archives-ouvertes.fr/hal-02010195
Publikováno v:
Crystal Growth & Design
Crystal Growth & Design, American Chemical Society, 2017, 17 (12), pp.6303-6310. ⟨10.1021/acs.cgd.7b00989⟩
Guia i Martín, Lluís Manel Sallet, Vincent Hassani, Said Martínez Tomás, María del Carmen Muñoz Sanjosé, Vicente 2017 Effect of Growth Temperature on the Structural and Morphological Properties of MgCdO Thin Films Grown by Metal Organic Chemical Vapor Deposition Crystal Growth & Design 17 12 6303 6310
RODERIC. Repositorio Institucional de la Universitat de Valéncia
instname
Crystal Growth & Design, American Chemical Society, 2017, 17 (12), pp.6303-6310. ⟨10.1021/acs.cgd.7b00989⟩
Guia i Martín, Lluís Manel Sallet, Vincent Hassani, Said Martínez Tomás, María del Carmen Muñoz Sanjosé, Vicente 2017 Effect of Growth Temperature on the Structural and Morphological Properties of MgCdO Thin Films Grown by Metal Organic Chemical Vapor Deposition Crystal Growth & Design 17 12 6303 6310
RODERIC. Repositorio Institucional de la Universitat de Valéncia
instname
II-VI oxides ternary alloys have attracted considerable interest of the scientific community due to the possibility of modulating their interesting optoelectronic properties. Despite this interest, MgCdO has been poorly studied. In this work, by usin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ba81a8dafb1665a44353ab97a53f9e07
https://hal.archives-ouvertes.fr/hal-02972562
https://hal.archives-ouvertes.fr/hal-02972562
Autor:
Alain Lusson, Mohamed Oumezzine, A. Fouzri, G. Amiri, Said Hassani, V. Sallet, M.A. Boukadhaba
Publikováno v:
Applied Physics A. 120:991-1000
The annealing effects of c-plane sapphire (α-Al2O3) substrate with a vicinal-cut angle of α = 0.25° toward the a-plane $$\left( {11\overline{2} 0} \right)$$ on the quality of epitaxial ZnO films grown by metal organic chemical vapor deposition wer