Zobrazeno 1 - 10
of 36
pro vyhledávání: '"Sahu Bhabani"'
We investigate the potential of epitaxial (001)p-NiO/(0001)n-ZnO heterostructures grown on (0001)sapphire substrates by pulsed laser deposition technique for ultraviolet photodetector application. Our study reveals that in the self-powered mode, thes
Externí odkaz:
http://arxiv.org/abs/2409.11922
NiO/ZnO heterostructures are grown on c-sapphire substrates using pulsed laser deposition (PLD) technique. X-ray diffraction study shows that the ZnO layer epitaxially grows along [0001]-direction on (0001)sapphire surface as expected. While, the epi
Externí odkaz:
http://arxiv.org/abs/2409.05003
(111)NiO epitaxial films are grown on c-sapphire substrates at various growth temperatures ranging from room-temperature to 600C using pulsed laser deposition (PLD) technique. Two series of samples, where different laser fluences are used to ablate t
Externí odkaz:
http://arxiv.org/abs/2404.13007
Ni cluster embedded (111)NiO layers grown on (0001)GaN films using pulsed laser deposition technique
Autor:
Arora, Simran, Yadav, Shivesh, Kaur, Amandeep, Sahu, Bhabani Prasad, Hussain, Zainab, Dhar, Subhabrata
(111) NiO epitaxial layers embedded with crystallographically oriented Ni-clusters are grown on c-GaN/Sapphire templates using pulsed laser deposition technique. Structural and magnetic properties of the films are examined by a variety of techniques
Externí odkaz:
http://arxiv.org/abs/2308.06999
Publikováno v:
Nanoscale Research Letters, Vol 6, Iss 1, p 172 (2011)
Abstract Pure and Si-rich HfO2 layers fabricated by radio frequency sputtering were utilized as alternative tunnel oxide layers for high-k/Si-nanocrystals-SiO2/SiO2 memory structures. The effect of Si incorporation on the properties of Hf-based tunne
Externí odkaz:
https://doaj.org/article/8aee3fe48fdb4469b5ac18439452ebeb
Autor:
Sahu Bhabani, Delachat Florian, Slaoui Abdelilah, Carrada Marzia, Ferblantier Gerald, Muller Dominique
Publikováno v:
Nanoscale Research Letters, Vol 6, Iss 1, p 178 (2011)
Abstract In this study, a wide range of a-SiNx:H films with an excess of silicon (20 to 50%) were prepared with an electron-cyclotron resonance plasma-enhanced chemical vapor deposition system under the flows of NH3 and SiH4. The silicon-rich a-SiNx:
Externí odkaz:
https://doaj.org/article/621ea0933fe84a8e8ca996cbd47fbbcd
Autor:
Gloux Florence, Groenen Jesse, Bonafos Caroline, Lhostis Sandrine, Sahu Bhabani, Slaoui Abdelilah, Carrada Marzia, Muller Dominique
Publikováno v:
Nanoscale Research Letters, Vol 6, Iss 1, p 177 (2011)
Abstract Ge nanocrystals (Ge-NCs) embedded in SiN dielectrics with HfO2/SiO2 stack tunnel dielectrics were synthesized by utilizing low-energy (≤5 keV) ion implantation method followed by conventional thermal annealing at 800°C, the key variable b
Externí odkaz:
https://doaj.org/article/59a457eea7554e74a6482ecd9bd03c8c
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Publikováno v:
AIP Conference Proceedings; 2024, Vol. 2995 Issue 1, p1-4, 4p