Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Sahanowaj Khan"'
Autor:
Sahanowaj Khan, Aritra Acharyya, Hiroshi Inokawa, Hiroaki Satoh, Arindam Biswas, Rudra Sankar Dhar, Amit Banerjee, Alexey Y. Seteikin
Publikováno v:
Photonics, Vol 10, Iss 7, p 800 (2023)
A Schottky barrier high-electron-mobility avalanche transit time (HEM-ATT) structure is proposed for terahertz (THz) wave generation. The structure is laterally oriented and based on AlGaN/GaN two-dimensional electron gas (2-DEG). Trenches are introd
Externí odkaz:
https://doaj.org/article/090de46979a94b5e965e9221b5b18a8c
Autor:
Seteikin, Sahanowaj Khan, Aritra Acharyya, Hiroshi Inokawa, Hiroaki Satoh, Arindam Biswas, Rudra Sankar Dhar, Amit Banerjee, Alexey Y.
Publikováno v:
Photonics; Volume 10; Issue 7; Pages: 800
A Schottky barrier high-electron-mobility avalanche transit time (HEM-ATT) structure is proposed for terahertz (THz) wave generation. The structure is laterally oriented and based on AlGaN/GaN two-dimensional electron gas (2-DEG). Trenches are introd
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=multidiscipl::5ad00322416d329d09dfc32bb6c9b8e5
Autor:
Hiroshi Inokawa, Arindam Biswas, Sahanowaj Khan, Aritra Acharyya, Rudra Sankar Dhar, Rishav Dutta
Publikováno v:
Journal of Nano- and Electronic Physics. 13:03014-1
Корисність структури зі зворотною областю подвійного дрейфу (DDR) була вивчена для виготовлення IMPATT діода з нітриду галію (GaN), що працює н
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::05d149a493efe48b3acac8d1bf394001
https://doi.org/10.21272/jnep.13(3).03014
https://doi.org/10.21272/jnep.13(3).03014
Publikováno v:
2017 IEEE International Conference on Circuits and Systems (ICCS).
In today's world, WSN (Wireless Sensor network) have gained a lot of attention due to its applications. Wireless Sensor Networks (WSNs) consist of small nodes with sensing, computation, and wireless communications capabilities. Designing a routing pr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::454e086d117dd94b01f15a7df99a87c9
https://doi.org/10.1109/iccs1.2017.8325953
https://doi.org/10.1109/iccs1.2017.8325953