Zobrazeno 1 - 10
of 57
pro vyhledávání: '"Saha, Atanu K"'
In ferroelectric (FE) materials, characteristics of a domain wall (DW), such as charge neutrality, width, polarization, speed, favorability, etc. strongly depend on the orientation of the domains. As an emerging FE material, Hafnium Zirconium Oxide (
Externí odkaz:
http://arxiv.org/abs/2305.12350
In this work, we investigate the device-to-device variations in remanent polarization of Hafnium-Zirconium-Oxide based Metal-Ferroelectric-Insulator-Metal (MFIM) stacks. We consider the effects of polycrystallinity in conjunction with multi-domain ef
Externí odkaz:
http://arxiv.org/abs/2303.15625
To understand and harness the physical mechanisms of ferroelectric Hafnium Zirconium Oxide (HZO)-based devices, there is a need for clear understanding of domain interactions, their dynamics, negative capacitance effects, and other multi-domain chara
Externí odkaz:
http://arxiv.org/abs/2208.11029
Computing in-memory (CiM) has emerged as an attractive technique to mitigate the von-Neumann bottleneck. Current digital CiM approaches for in-memory operands are based on multi-wordline assertion for computing bit-wise Boolean functions and arithmet
Externí odkaz:
http://arxiv.org/abs/2201.01509
We investigate the polarization switching mechanism in ferroelectric-dielectric (FE-DE) stacks and its dependence on the dielectric thickness (TDE). We fabricate HZO-Al2O3 (FE-DE) stack and experimentally demonstrate a decrease in remnant polarizatio
Externí odkaz:
http://arxiv.org/abs/2105.04647
In this work, we theoretically and experimentally investigate the working principle and non-volatile memory (NVM) functionality of 2D $\alpha$-In$_2$Se$_3$ based ferroelectric-semiconductor-metal-junction (FeSMJ). First, we analyze the semiconducting
Externí odkaz:
http://arxiv.org/abs/2007.02752
Autor:
Saha, Atanu K, Gupta, Sumeet K
In this work, we analyze the ferroelectric (FE) domain-wall (DW) induced negative capacitance (NC) effect in Metal-FE-Insulator-Metal (MFIM) and Metal-FE-Insulator-Semiconductor (MFIS) stacks. Our analysis is based on 2D phase field simulations. Cons
Externí odkaz:
http://arxiv.org/abs/1912.00104
In this work, we investigate the accumulative polarization (P) switching characteristics of ferroelectric (FE) thin films under the influence of sequential electric-field pulses. By developing a dynamic phase-field simulation framework based on time-
Externí odkaz:
http://arxiv.org/abs/1901.07121
Autor:
Si, Mengwei, Saha, Atanu K., Liao, Pai-Ying, Gao, Shengjie, Neumayer, Sabine M., Jian, Jie, Qin, Jingkai, Balke, Nina, Wang, Haiyan, Maksymovych, Petro, Wu, Wenzhuo, Gupta, Sumeet K., Ye, Peide D.
Publikováno v:
ACS Nano 2019, 13, 8, 8760-8765
A material with reversible temperature change capability under an external electric field, known as the electrocaloric effect (ECE), has long been considered as a promising solid-state cooling solution. However, electrocaloric (EC) performance of EC
Externí odkaz:
http://arxiv.org/abs/1901.06616
Autor:
Si, Mengwei, Saha, Atanu K., Gao, Shengjie, Qiu, Gang, Qin, Jingkai, Duan, Yuqin, Jian, Jie, Niu, Chang, Wang, Haiyan, Wu, Wenzhuo, Gupta, Sumeet K., Ye, Peide D.
Publikováno v:
Nat. Electron. 2, 580-586 (2019)
Ferroelectric field-effect transistors employ a ferroelectric material as a gate insulator, the polarization state of which can be detected using the channel conductance of the device. As a result, the devices are of potential to use in non-volatile
Externí odkaz:
http://arxiv.org/abs/1812.02933