Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Sagy Levy"'
Publikováno v:
2015 IEEE International Conference on Microwaves, Communications, Antennas and Electronic Systems (COMCAS).
Power Management Integrated Circuits (PMIC) chips contain large power switches - usually LDMOS transistors, along with low current control circuitry. During transistor switching, charge carriers are injected into the substrate and affect the surround
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::512d17f7efb610a79fc05a7494851af9
https://doi.org/10.1109/comcas.2015.7360399
https://doi.org/10.1109/comcas.2015.7360399
Publikováno v:
2013 IEEE International Conference on Microwaves, Communications, Antennas and Electronic Systems (COMCAS 2013).
A super Low Rdson Power transistor with high Break down voltage was developed, using double Resurf technique with low mask count.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::915a0b3b496683fbe7c2b9c9980276b8
https://doi.org/10.1109/comcas.2013.6685308
https://doi.org/10.1109/comcas.2013.6685308
Autor:
Nathanaelle Klein, Sagy Levy, Michael Khalfin, Shai Kfir, Shye Shapira, Alexey Heiman, Zachary Lee, Sharon Levin
Publikováno v:
2011 IEEE International Conference on Microwaves, Communications, Antennas and Electronic Systems (COMCAS 2011).
We describe modular voltage and current isolation schemes in a Power Management Integrated Circuit (PMIC) silicon platform. The isolation reduces the power dissipation during switching at the high side driver. It also suppresses the cross talk betwee
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b7c02f33623f8a2c50aab43b1302428e
https://doi.org/10.1109/comcas.2011.6105926
https://doi.org/10.1109/comcas.2011.6105926
Autor:
Scott E. Thompson, Igor Polishchuk, Sagy Levy, Krishnaswamy Ramkumar, Nirav Shah, Ravindra Kapre, Oliver Pohland
Publikováno v:
2006 64th Device Research Conference.
This paper presents a simple and cost-effective method to enhance 65nm SRAM technology performance using a single stress liner, resulting in 25% increase in cell read current. A novel slot contact process allows significant improvement of NMOS drive
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::eca002547ec779838565c35b824ee429
https://doi.org/10.1109/drc.2006.305174
https://doi.org/10.1109/drc.2006.305174