Soft and Stretchable Humidity‐Insensitive Thermoresistive Temperature Sensor with A Tensile Strain Modulated Sensitivity

Autor: Ahmed Albeltagi, Jarkko Tolvanen, Sagar R. Bhalerao, Jari Hannu

Publikováno v: Macromolecular Materials and Engineering, Vol 309, Iss 4, Pp n/a-n/a (2024)

Abstract Soft and stretchable electronics represents a high potential paradigm shift in field of electronics, for example, in applications related to solar cells, organic displays, electronic skin, and wearable sensors. In this work, a soft and stret

Externí odkaz: https://doaj.org/article/be160626ca36491ca4a5b6490203a99b

Flexible, Gallium Oxide (Ga2O3) Thin Film Transistors (TFTs) and Circuits for the Internet of Things (IoT)

Autor: Donald Lupo, Sagar R. Bhalerao, Paul R. Berger

Publikováno v: 2021 IEEE International Flexible Electronics Technology Conference (IFETC).

Even though present advanced silicon-based devices and technology could be reaching their zenith of performance levels, still there are many orthogonal applications, which are yet far from their reach. Also, due to their high process temperatures, th

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::a1b3070185de23c186003f44e509ca97
https://doi.org/10.1109/ifetc49530.2021.9580524

0.6V Threshold Voltage Thin Film Transistors With Solution Processable Indium Oxide (In2O3) Channel and Anodized High-$\kappa$ Al2O3 Dielectric

Autor: Ioannis Kymissis, Sagar R. Bhalerao, Donald Lupo, Ari Alastalo, Amirali Zangiabadi, Paul R. Berger, Jaakko Leppäniemi

Publikováno v: Bhalerao, S R, Lupo, D, Zangiabadi, A, Kymissis, I, Leppaniemi, J, Alastalo, A & Berger, P R 2019, ' 0.6V threshold voltage thin film transistors with solution processable indium oxide (In 2 O 3 ) Channel and Anodized High-κ Al 2 O 3 Dielectric ', IEEE Electron Device Letters, vol. 40, no. 7, 8720175, pp. 1112-1115 . https://doi.org/10.1109/LED.2019.2918492

Low-voltage operation and low processing temperature of metal oxide transistors remain a challenge. Commonly metal oxide transistors are fabricated at very high processing temperatures (above 500°C) and their operating voltage is quite high (30–50

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::debed7f0391f2362dd6614d415f5a447
https://doi.org/10.1109/led.2019.2918492

Advancements in Solution Processable Devices using Metal Oxides For Printed Internet-of-Things Objects

Autor: Noah Talisa, Charles H. Winter, Sagar R. Bhalerao, Paul R. Berger, Maimouna A. Niang, Miao Li, Michael Tripepi, Donald Lupo, Enam Chowdhury, Brandon Harris, Ryan M. Mattei

Publikováno v: 2019 Electron Devices Technology and Manufacturing Conference (EDTM).

Internet-of-things (IoT) objects are expected to exceed 75 billion objects by 2020, and a large part of the expansion is expected to be at a finer granularity than existing silicon-based IoT objects (i.e. tablets and cell phones) can deliver [1]. Cur

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::fe21a37a896569c1d45df43b67a7ef86
https://doi.org/10.1109/edtm.2019.8731322

Solvothermal Synthesis of CdS Nano/Micro Rods and Their Photocatalytic Activity

Autor: Sudhir S. Arbuj, Jalindar D. Ambekar, Sunit Rane, Uttam Mulik, Sagar R. Bhalerao

Publikováno v: Nanoscience and Nanotechnology Letters. 6:204-209

Here in, we have synthesized one dimensional CdS nano/micro rods using solvothermal reaction technique at 200 � C for 12 and 48 hrs respectively. The synthesized material was characterized using various spectroscopic techniques such as, X-ray diffr

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::36e8ad61d0512df1beea01572c23ac18
https://doi.org/10.1166/nnl.2014.1745