Zobrazeno 1 - 10
of 21
pro vyhledávání: '"Safiul Alam Mollick"'
Autor:
Dilruba Hasina, Anirban Mitra, Ranveer Singh, Mohit Kumar, Sanjeev Kumar Srivastava, Tapobrata Som, Safiul Alam Mollick, Minh Anh Luong
Publikováno v:
ACS Applied Electronic Materials. 3:3804-3814
Publikováno v:
Solar Energy. 221:185-196
We report on metal-assisted chemical etching (MaCE) of single crystalline p-Ge(1 0 0) substrates at an elevated temperature, using dilute H2O2 solution, for various etching times in the range of 30–1200 s. We carry out atomic force microscopic and
Autor:
null Sudheer, Rupam Mandal, Dilruba Hasina, Alapan Dutta, Safiul Alam Mollick, Aparajita Mandal, Tapobrata Som
Publikováno v:
Applied Surface Science. 610:155411
Autor:
Ranveer Singh, Biswarup Satpati, Tapobrata Som, Satyaranjan Bhattacharyya, Safiul Alam Mollick
Publikováno v:
Journal of Magnetism and Magnetic Materials. 498:166198
This paper reports on the influence of growth angle on morphology and uniaxial magnetic anisotropy of 60 nm-thick sputter-deposited cobalt films on patterned-Ge substrates (having nanowire-like morphology with extreme regularity) prepared by keV-ion
Publikováno v:
Nanotechnology. 29(12)
We present a systematic investigation on uniaxial magnetic anisotropy (UMA) in Co thin films induced by high aspect ratio nanopatterned anisotropic substrates. Self-organized long grating-like nanostructures, with extreme regularities, are fabricated
Autor:
Biswarup Satpati, Debabrata Ghose, Safiul Alam Mollick, Debasree Chowdhury, Satyaranjan Bhattacharyya
Publikováno v:
physica status solidi (b). 252:811-815
Ripple formation driven by Ehrlich–Schwoebel barrier is evidenced for normal incidence 30 eV Ar+ bombardment of GaAs (001) surface at elevated target temperature. The pattern follows the twofold symmetry of the bombarded crystal surface. The ridges
Publikováno v:
Vacuum. 107:23-27
A dense array of faceted nanostructures evolves on the Ge (001) surfaces for normal incidence hyperthermal ion bombardment at elevated temperatures. There is a narrow window of temperatures, just above the crystal annealing temperature, in which the
Autor:
Nihar Ranjan Ray, Satyaban Bhunia, Debabrata Ghose, Safiul Alam Mollick, Satyaranjan Bhattacharyya, M. Ranjan
Publikováno v:
Vacuum. 101:387-393
Nanometer-thickness SiGe alloy layers were synthesized by direct Si ion implantation in Ge (100) wafers at different fluences followed by high temperature annealing. The cross-sectional transmission electron microscopy and secondary ion mass spectrom
Publikováno v:
Vacuum. 99:289-293
Energetic Au ion sputtering of crystalline Ge surface at normal incidence and room temperature can produce nanodot morphology, which has been studied by atomic force microscopy. The cross-sectional transmission electron microscopy of the dot structur
Autor:
Safiul Alam Mollick, Ranveer Singh, Tapobrata Som, Mohit Kumar, Biswarup Satpati, Debabrata Ghose
Publikováno v:
Nanotechnology. 27(43)
Nanoarchitecture by atomic manipulation is considered to be one of the emerging trends in advanced functional materials. It has a gamut of applications to offer in nanoelectronics, chemical sensing, and nanobiological science. In particular, highly o