Short-circuit robustness test and in depth microstructural analysis study of SiC MOSFET

Autor: F. Fouquet, Safa Mbarek, Olivier Latry, Pascal Dherbécourt

Publikováno v: Microelectronics Reliability
Microelectronics Reliability, Elsevier, 2017, 76-77, pp.527-531. ⟨10.1016/j.microrel.2017.07.002⟩
Microelectronics Reliability, 2017, 76-77, pp.527-531. ⟨10.1016/j.microrel.2017.07.002⟩

The purpose of this paper is to describe an approach of short circuit ageing allowing further microstructural analysis that is needed for the identification of failure mechanisms. So far, few relevant studies on SiC MOSFET SC robustness tests have be

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::11aa7266755683473702ed0cf1550d76
https://hal.archives-ouvertes.fr/hal-01766126

Analyse par électroluminescence des dégradations de transistor MOSFET en SiC

Autor: Nguyen, Tien Anh, Andres, ECHEVERRI, Safa, MBAREK, Moultif, Niemat, Dherbécourt, Pascal, Latry, O., Eric, JOUBERT

Publikováno v: Symposium de Génie Electrique 2016-SGE2016
Symposium de Génie Electrique 2016-SGE2016, Jun 2016, Grenoble, France

International audience

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::2ae09f7ca6bb2e5b17b611869a17ed54
https://hal.archives-ouvertes.fr/hal-01696225

Robustness Study of SiC MOSFET Under Harsh Electrical and Thermal Constraints

Autor: Safa, Mbarek, Dherbécourt, Pascal, Latry, O., Fouquet, Francois, Dhouha, Othman, Berkani, Mounira, Lefebvre, Stéphane

Publikováno v: CENICS
CENICS, 2014, Lisbonne, Portugal

International audience

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::a75f8d750dcfeb589cdb6de26abb0fcc
https://hal.archives-ouvertes.fr/hal-01700474