Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Saehan Kwon"'
Autor:
Kinam Kim, Hyungtak Kim, Sung-Sam Lee, Daehan Han, Yun-gi Kim, Byung-Il Ryu, Sang-Ho Kim, Chang-hyun Cho, Saehan Kwon, J.M. Park, Sungho Jang, Yangsoo Sung, Sangmin Jun, Wontae Park, Ji-Hoon Kim
Publikováno v:
Physica C: Superconductivity. 423:29-36
For the first time, we developed 70nm DRAM technology applicable to a manufacturing level. This technology is aimed at DDR-3 application, which requires low-voltage operation and high speed performance. Fully working 70nm DRAMs were realized combinin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::15365c45851d5b5f2d0be0e97157bfb4
https://doi.org/10.1016/j.physc.2005.03.020
https://doi.org/10.1016/j.physc.2005.03.020
Autor:
null Hyungtak Kim, null Sangho Kim, null Sungsam Lee, null Sungho Jang, null Ji-hoon Kim, null Yangsoo Sung, J. Puk, null Saehan Kwon, null Sangmin Jun, null Wontae Park, null Daehan Han, null Changhyun Cho, null Yungi Kim, null Kinam Kim, null Byungil Ryu
Publikováno v:
IEEE VLSI-TSA International Symposium on VLSI Technology, 2005. (VLSI-TSA-Tech)..
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f692ce6b3d4915d2c0b70b3031bcce48
https://doi.org/10.1109/vtsa.2005.1497069
https://doi.org/10.1109/vtsa.2005.1497069
Autor:
Hyungtak Kim, Sangho Kim, Sungsam Lee, Sungho Jang, Ji-hoon Kim, Yangsoo Sung, Junwoong Park, Saehan Kwon, Sangmin Jun, Wontae Park, Daehan Han, Changhyun Cho, Yungi Kim, Kinam Kim, Byungil Ryu
Publikováno v:
IEEE VLSI-TSA International Symposium on VLSI Technology, 2005. (VLSI-TSA-Tech); 2005, p29-30, 2p
Publikováno v:
IEEE VLSI-TSA International Symposium on VLSI Technology, 2005. (VLSI-TSA-Tech); 2005, p06-010-010, 1p