Zobrazeno 1 - 10
of 64
pro vyhledávání: '"Saeed Jahdi"'
Publikováno v:
IEEE Open Journal of Industry Applications, Vol 5, Pp 235-252 (2024)
The unclamped inductive switching (UIS) measurements can be categorized as “low energy” and “high energy” avalanche. The conventional approach to these tests is to increase the stress by either increasing the pulse length, or decreasing the i
Externí odkaz:
https://doaj.org/article/8b02c427ab1145458d3e1a16f77f0c07
Publikováno v:
IEEE Open Journal of Power Electronics, Vol 5, Pp 554-564 (2024)
In this work, the possibility of using different generations of $\beta$-Ga2O3 as an ultra-wide-bandgap power semiconductor device for high power converter applications is explored. The competitiveness of $\beta$-Ga2O3 for power converters in still no
Externí odkaz:
https://doaj.org/article/9190531c07094bbfbbb9bdde0a0104f5
Publikováno v:
IEEE Open Journal of Power Electronics, Vol 4, Pp 887-899 (2023)
While SiC MOSFETs are now being utilized in industry their robustness under heavy-duty applications still remains a concern. In this paper, the results of experimental measurements of degradation to failure of different structured SiC power MOSFETs,
Externí odkaz:
https://doaj.org/article/d37810fc454c44ee845e6e226f8b9b3a
Autor:
Chengjun Shen, Saeed Jahdi, Juefei Yang, Olayiwola Alatise, Jose Ortiz-Gonzalez, Ruizhu Wu, Phil Mellor
Publikováno v:
IEEE Open Journal of the Industrial Electronics Society, Vol 3, Pp 65-80 (2022)
The 4H-SiC vertical NPN BJTs are attractive power devices with potentials to be used as high power switching devices with high voltage ratings in range of 1.7 kV and high operating temperatures. In this paper, the advantages of the 4H-SiC NPN BJTs in
Externí odkaz:
https://doaj.org/article/a5c5fff66eea4081a9f674b73f2a6ffa
Autor:
Juefei Yang, Saeed Jahdi, Bernard Stark, Olayiwola Alatise, Jose Ortiz-Gonzalez, Ruizhu Wu, Phil Mellor
Publikováno v:
IEEE Open Journal of the Industrial Electronics Society, Vol 3, Pp 188-202 (2022)
In this paper, the crosstalk-induced shoot-through current and induced gate voltage of SiC planar MOSFETs, SiC symmetrical double-trench MOSFETs and SiC asymmetrical double-trench MOSFETs is investigated on a half-bridge circuit to analyse the impact
Externí odkaz:
https://doaj.org/article/c634df4c4ed7429598ca8dfdf01b2c4d
Publikováno v:
Energies, Vol 16, Iss 11, p 4380 (2023)
This review explores the performance and reliability of power semiconductor devices required to enable the electrification of heavy goods vehicles (HGVs). HGV electrification can be implemented using (i) batteries charged with ultra-rapid DC charging
Externí odkaz:
https://doaj.org/article/9d157e60ff8e4d39a84c4b5e40b16438
Publikováno v:
IEEE Open Journal of Power Electronics, Vol 2, Pp 265-276 (2021)
In this paper, performance at 1st and 3rd quadrant operation of Silicon and Silicon Carbide (SiC) symmetrical and asymmetrical double-trench, superjunction and planar power MOSFETs is analysed through a wide range of experimental measurements using c
Externí odkaz:
https://doaj.org/article/7392c96879a644b38b1411b2cc018c99
Autor:
Chengjun Shen, Saeed Jahdi, Olayiwola Alatise, Jose Ortiz-Gonzalez, Avinash Aithal, Phil Mellor
Publikováno v:
IEEE Open Journal of Power Electronics, Vol 2, Pp 145-154 (2021)
Pole-to-pole DC faults on HB-MMC-VSC-HVDC schemes impose significant risk of cascade failure on IGBT/diode pairs. Other novel topologies with fault blocking capability, i.e. AAC converters, and DC circuit breakers are not yet fully matured. Therefore
Externí odkaz:
https://doaj.org/article/1a262feb59474443ba0db57809b19131
Publikováno v:
Energies, Vol 14, Iss 20, p 6834 (2021)
This paper investigates the impact of parameter variation between parallel connected SiC MOSFETs on short circuit (SC) performance. SC tests are performed on parallel connected devices with different switching rates, junction temperatures and thresho
Externí odkaz:
https://doaj.org/article/434b566e05ac4848bfad6ec9fd93f08b
Autor:
Renze Yu, Saeed Jahdi, Phil Mellor, Juefei Yang, Chengjun Shen, Li Liu, Olayiwola Alatise, Jose Ortiz-Gonzalez
Publikováno v:
Yu, R, Jahdi, S, Mellor, P H, Yang, J, Shen, C, Liu, L, Alatise, O & Ortiz-Gonzalez, J 2022, Investigation of Repetitive Short Circuit Stress as a Degradation Metric in Symmetrical and Asymmetrical Double-Trench SiC Power MOSFETs . in 2022 IEEE Workshop on Wide Bandgap Power Devices and Applications in Europe (WiPDA Europe) . Institute of Electrical and Electronics Engineers (IEEE), Coventry, United Kingdom, 2022 IEEE Workshop on Wide Bandgap Power Devices and Applications in Europe (WiPDA Europe), 18/09/22 . https://doi.org/10.1109/WiPDAEurope55971.2022.9936284
In this paper, the reliability of planar, symmetrical, and asymmetrical SiC MOSFET is compared under repetitive short circuit shocks. Both static and dynamic parameters are tested after certain cycles to investigate the degradation pattern of the dev
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6aa856df8ff3260d29e6e5d6eae44ebe
https://research-information.bris.ac.uk/ws/files/345994574/2022157255.pdf
https://research-information.bris.ac.uk/ws/files/345994574/2022157255.pdf