Zobrazeno 1 - 10
of 27
pro vyhledávání: '"Saeed Haji Nasiri"'
Autor:
Somayeh Fotoohi, Saeed Haji Nasiri
Publikováno v:
Journal of Optoelectronical Nanostructures, Vol 4, Iss 4, Pp 15-38 (2019)
Spin-polarized electronic and transport properties of Armchair GraphdiyneNanoribbons (A-GDYNR) with single vacancy (SV), two types of configurations fordouble vacancy (DV1, DV2) and multi vacancy (MV) defects are studied by nonequilibriumGreen’s fu
Externí odkaz:
https://doaj.org/article/1dc9c92a6f7b4f4cab0d7740b11be502
Publikováno v:
مجله مدل سازی در مهندسی, Vol 21, Iss 72, Pp 109-121 (2023)
In Junctionless transistors, the source-channel-drain doping is of the same type and level, hence, the process of making Junctionless transistors is easier than inverting mode transistor. Despite this benefit, reducing the transconductance of Junctio
Externí odkaz:
https://doaj.org/article/96a13e2ef3484f06b7377a9ece50e0bb
Autor:
somayeh fotoohi, saeed haji-nasiri
Publikováno v:
مجله مدل سازی در مهندسی, Vol 18, Iss 61, Pp 121-137 (2020)
Abstract: A seamless graphene inverter including graphene nanoribbon field effect transistor (GNRFET) and graphene interconnect is proposed. The seamless structure is suggested to eliminate the ohmic, schottky, and parasitic resistances in the juncti
Externí odkaz:
https://doaj.org/article/0085866f4808401f9923c2019e7f3a43
Publikováno v:
مجله مدل سازی در مهندسی, Vol 17, Iss 58, Pp 113-126 (2019)
Using multi transmission line (MTL) model, a compact circuit model for mixed multiwall carbon nanotube (MMWCNT) interconnects is proposed. Using the proposed circuit model, an algorithmic model is proposed for calculating the transfer matrix of these
Externí odkaz:
https://doaj.org/article/40be3cd149cc4e1c86b7bc0b6b33fe8b
Autor:
saeed haji-nasiri
Publikováno v:
مجله مدل سازی در مهندسی, Vol 17, Iss 58, Pp 295-303 (2019)
AAbstract: Transfer function of the InGaAs/GaAs SAQD laser is calculated using its rate equations. Using the calculated transfer function, time and frequency analysis can be implemented completely. In the time domain, the calculated transfer function
Externí odkaz:
https://doaj.org/article/9ffc405b07c3452d99c0239b2082ae29
Publikováno v:
Micro & Nano Letters. 15:610-613
A graphene rotational switch (GRS) is presented utilising vacancy defect and nitrogen (N) doping in armchair graphene nanoribbon (AGNR). By twisting AGNR at different angles in the suggested device, its conductivity can be controlled. Based on the si
Publikováno v:
Silicon. 12:2221-2228
In this paper, a numerically comprehensive investigation have been performed in order to propose a high-κ spacer triple-gate junctionless FinFET (HKS TG JL FinFET) in three dimensional (3D) simulation domain. In the proposed structure, a high dielec
Publikováno v:
AEU - International Journal of Electronics and Communications. 108:226-234
This paper is about the compared performance investigation of various structures of Hetero-Dielectric (HD) triple-gate FinFETs with different gate oxides in terms of Double Hetero Gate Oxide (DHGO), Triple Hetero Gate Oxide (THGO) and Quadruple Heter
Publikováno v:
IEEE Transactions on Nanotechnology. 18:890-895
Bilayer graphene like monolayer graphene has a zero bandgap. To use as a channel material of FETs, its band gap should be open which is crucial for its application in logic circuits. Several methods have been developed to open the band gap in graphen
Publikováno v:
Applied Physics A. 126
A rectifying behavior is achieved by means of boron doping in defected armchair graphene nanoribbon (AGNR). In the proposed AGNR device, the effect of line edge roughness (LER) is investigated on the electronic and transport characteristics. Moreover