Zobrazeno 1 - 2
of 2
pro vyhledávání: '"Saddik, K. Ben"'
Publikováno v:
J. Appl. Phys. 134, 175703 (2023)
We investigated the chemical beam epitaxy of GaP1-xNx to correlate the growth parameters with their properties when they are grown on nominally (001)-oriented Si substrates, as desired for the lattice-matched integration of optoelectronic devices wit
Externí odkaz:
http://arxiv.org/abs/2302.01147
Publikováno v:
Journal of Crystal Growth 571, 126242 (2021)
A wide range of n- and p-type doping levels in GaAs layers grown by chemical beam epitaxy is achieved using H$_{2}$-diluted DTBSi and CBr$_{4}$ as gas precursors for Si and C. We show that the doping level can be varied by modifying either the concen
Externí odkaz:
http://arxiv.org/abs/2102.13132