Zobrazeno 1 - 10
of 15
pro vyhledávání: '"Sadaji Tsuge"'
Autor:
Shinya Tsuda, T. Sawada, Kenichiro Wakisaka, Takao Matsuyama, Sadaji Tsuge, Norihiro Terada, Toshiaki Baba
Publikováno v:
Journal of Non-Crystalline Solids. :940-944
We succeeded in fabricating high-quality polycrystalline silicon (poly-Si) thin films with no boundary from the bottom surface to the top, and achieved an extremely high electron mobility of 808 cm2/V s by a solid phase crystallization (SPC) method.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8311359c0812028291b88fb92753e802
https://doi.org/10.1016/0022-3093(96)00091-9
https://doi.org/10.1016/0022-3093(96)00091-9
Autor:
Shoichi Nakano, Yukinori Kuwano, Sadaji Tsuge, Noboru Nakamura, Shinichi Kouzuma, Yasuo Kishi, K. Wakizaka, Yoshihiro Hishikawa, Shinya Tsuda
Publikováno v:
Journal of Non-Crystalline Solids. :717-720
The optical, electric and structural properties of hydrogenated amorphous silicon (a-Si:H) films, deposited using the plasma-CVD method, are systematically investigated as functions of the substrate temperature (T s ) and plasma parameters such as th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5adfb56e424209d8a47026383fa9929f
https://doi.org/10.1016/s0022-3093(05)80221-2
https://doi.org/10.1016/s0022-3093(05)80221-2
Autor:
T. Sawada, Shinya Tsuda, Norihiro Terada, Toshiaki Baba, T. Takahama, Shoichi Nakano, Sadaji Tsuge, Kenichiro Wakisaka
Publikováno v:
Proceedings of 1994 IEEE 1st World Conference on Photovoltaic Energy Conversion - WCPEC (A Joint Conference of PVSC, PVSEC and PSEC).
An aperture-area conversion efficiency of 20.0% (intrinsic efficiency: 21.0%) has been achieved for a 1.0 cm/sup 2/ CZ n-type single crystalline silicon (c-Si) solar cell, by using the "HIT (heterojunction with intrinsic thin-layer)" structure on bot
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9611a49a24afeac2c8a6a185d72bf619
https://doi.org/10.1109/wcpec.1994.519952
https://doi.org/10.1109/wcpec.1994.519952
Autor:
Yoshihiro Hishikawa, Noboru Nakamura, Yukinori Kuwano, Hiroshi Dohjoh, Sadaji Tsuge, Hisao Haku, Katsunobu Sayama, Kenichiro Wakisaka, Shinya Tsuda, Masao Isomura, Mikio Taguchi, Yasuo Kishi, Shoichi Nakano
Publikováno v:
The Conference Record of the Twenty-Second IEEE Photovoltaic Specialists Conference - 1991.
A total area conversion efficiency of 11.1% was achieved for a 10*10 cm/sup 2/ integrated-type a-Si solar cell submodule. Approaches to improving conversion efficiency included the development of new materials, new fabrication methods, and a new devi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a4e9c86c9e345c39ffefac87df1e2846
https://doi.org/10.1109/pvsc.1991.169409
https://doi.org/10.1109/pvsc.1991.169409
Autor:
Hitoshi Sakata, K. Uchihashi, Seiichi Kiyama, T. Nakai, Sadaji Tsuge, Toshiaki Baba, Mikio Taguchi
Publikováno v:
Conference Record of the Twenty-Eighth IEEE Photovoltaic Specialists Conference - 2000 (Cat. No.00CH37036).
A world record total area conversion efficiency of 20.7% and high open circuit voltage (VOC) of 719 mV were achieved on a solar cell with HIT (heterojunction with intrinsic thin-layer) structures on both sides (wafer size: 100.5 cm/sup 2/, n-type sol
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4a86856adfe371b07bda70ddc6397f08
https://doi.org/10.1109/pvsc.2000.915742
https://doi.org/10.1109/pvsc.2000.915742
Autor:
Shoichi Nakano, Noboru Nakamura, Yukinori Kuwano, Yoshihiro Hishikawa, Sadaji Tsuge, Shinya Tsuda
Publikováno v:
Journal of Applied Physics. 69:508-510
Hydrogenated amorphous silicon (a‐Si:H) films have been fabricated by a plasma chemical vapor deposition (plasma‐CVD) method at low substrate temperatures (Ts : 80 or 50 °C) to obtain wide‐gap films. Device‐quality wide‐gap films (photocon
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5e707b61299b9625b616c67c3462dcc2
https://doi.org/10.1063/1.347694
https://doi.org/10.1063/1.347694
Autor:
Noboru Nakamura, Yukinori Kuwano, Yoshihiro Hishikawa, Shoichi Nakano, Shinya Tsuda, Sadaji Tsuge
Publikováno v:
Applied Physics Letters. 57:771-773
Hydrogenated amorphous silicon (a‐Si:H) films have been deposited on different substrates by a plasma chemical vapor deposition method. Raman spectra of the a‐Si:H films are significantly dependent on the material of the substrate (glass, crystal
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bb462b9ed4158e4ec18bd4499f68cddb
https://doi.org/10.1063/1.103416
https://doi.org/10.1063/1.103416
Publikováno v:
MRS Proceedings. 452
The a-Si/poly-Si thin film tandem solar cell is a promising candidate for low-cost solar cells. We have conducted R&D on poly-Si thin film using the Solid Phase Crystallization (SPC) method from amorphous silicon (a-Si). To improve the film quality o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dd40b9875a60260c0c7d2a239765f534
https://doi.org/10.1557/proc-452-965
https://doi.org/10.1557/proc-452-965
Autor:
Shoichi Nakano, Yukinori Kuwano, Yoshihiro Hishikawa, Sadaji Tsuge, Manabu Sasaki, Shinya Tsuda, Shingo Okamoto
Publikováno v:
MRS Proceedings. 258
A hydrogen-plasma treatment has been used for the first time to fabricate wide-gap, high-quality a-Si:H films. The hydrogen content (CH) of a-Si:H films substantially increases by the hydrogen-plasma treatment after deposition, without deteriorating
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d97a19a3202d537d1df68ec092049ba7
https://doi.org/10.1557/proc-258-869
https://doi.org/10.1557/proc-258-869
Autor:
Shinya Tsuda, Yukinori Kuwano, Sadaji Tsuge, Shoichi Nakano, Michitoshi Ohnishi, Noboru Nakamura, Yoshihiro Hishikawa
Publikováno v:
MRS Proceedings. 192
Wide-gap a-Si:H films with device quality (Tauc’s optical gap > 1.9eV, σph under AMI.5, 100mW/cm2 illumination ≥ 10−5, Ω−1cm−1, a σph/σ a≥106) have been fabricated. These films are deposited at low substrtate temperatures (TS≤80°C
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b39aa77003283c8e9510656287694882
https://doi.org/10.1557/proc-192-511
https://doi.org/10.1557/proc-192-511