Zobrazeno 1 - 10
of 22
pro vyhledávání: '"Sacksteder IV, Vincent E."'
Existence of a Phase with Finite Localization Length in the Double Scaling Limit of N-Orbital Models
Autor:
Sacksteder IV, Vincent E.
Among the models of disordered conduction and localization, models with $N$ orbitals per site are attractive both for their mathematical tractability and for their physical realization in coupled disordered grains. However Wegner proved that there is
Externí odkaz:
http://arxiv.org/abs/2101.12394
Autor:
Sacksteder IV, Vincent E.
Research on high-$T_c$ superconductors has generally not focused on analysis of the topological structure of electronic bands in these materials. In this article we collate and discuss several well-known experimental observables that signal that cert
Externí odkaz:
http://arxiv.org/abs/2006.15848
Autor:
Sacksteder IV, Vincent E.
When materials are in the diffusive regime, i.e. when the scattering length is less than the sample size, charge transport is mediated by diffusons and cooperons. We argue that these charge carriers are not always spread out throughout the sample, li
Externí odkaz:
http://arxiv.org/abs/2004.00885
Autor:
Kölzer, Jonas, Rosenbach, Daniel, Weyrich, Christian, Schmitt, Tobias W., Schleenvoigt, Michael, Jalil, Abdur Rehman, Schüffelgen, Peter, Mussler, Gregor, Sacksteder IV, Vincent E., Grützmacher, Detlev, Lüth, Hans, Schäpers, Thomas
Universal conductance fluctuations and the weak antilocalization effect are defect structure specific fingerprints in the magnetoconductance that are caused by electron interference. Experimental evidence is presented that the conductance fluctuation
Externí odkaz:
http://arxiv.org/abs/1907.09801
Publikováno v:
Phys. Rev. B 94, 205424 (2016)
We study the magnetoconductance of topological insulator nanowires in a longitudinal magnetic field, including Aharonov-Bohm, Altshuler-Aronov-Spivak, perfectly conducting channel, and universal conductance fluctuation effects. Our focus is on predic
Externí odkaz:
http://arxiv.org/abs/1605.02203
Publikováno v:
Phys. Rev. B 90, 235148, 2014
Three-dimensional strong topological insulators (TIs) guarantee the existence of a 2-D conducting surface state which completely covers the surface of the TI. The TI surface state necessarily wraps around the TI's top, bottom, and two sidewalls, and
Externí odkaz:
http://arxiv.org/abs/1409.7768
Publikováno v:
Phys. Rev. B 89, 161307(R), 2014
We obtain the spin-orbit interaction and spin-charge coupled transport equations of a two-dimensional heavy hole gas under the influence of strain and anisotropy. We show that a simple two-band Hamiltonian can be used to describe the holes. In additi
Externí odkaz:
http://arxiv.org/abs/1308.4248
Publikováno v:
Physical Review B 88, 045429 (2013)
Topological insulators are characterized by specially protected conduction on their outer boundaries. We show that the protected edge conduction exhibited by 2-D topological insulators (and also Chern insulators) is independent of non-magnetic bounda
Externí odkaz:
http://arxiv.org/abs/1212.2827
Publikováno v:
Physical Review B 85, 205303 (2012)
When topological insulators possess rotational symmetry their spin lifetime is tied to the scattering time. We show that in anisotropic TIs this tie can be broken and the spin lifetime can be very large. Two different mechanisms can obtain spin condu
Externí odkaz:
http://arxiv.org/abs/1108.2938
Autor:
Sacksteder IV, Vincent E.
This paper shows how to obtain non-rigorous mathematical control over models of loosely coupled disordered grains; it provides new information about saddle point structure and perturbative corrections. Both the Wegner model and a variant due to Diser
Externí odkaz:
http://arxiv.org/abs/0906.0207