Zobrazeno 1 - 3
of 3
pro vyhledávání: '"Sachin K. Saini"'
Autor:
R. Raman, Anshu Goyal, Brajesh S. Yadav, Ufana Riaz, Garima Upadhyaya, Aman Arora, Sachin K. Saini, Rajesh K. Bag, M. V. G. Padmavati, R.A. Khan, Jaya Lohani, Vikash K. Singh, Renu Tyagi, Kapil Narang, Anubha Jain
Publikováno v:
Journal of Materials Science: Materials in Electronics. 31:14336-14344
In this study, the GaN films were deposited in the multilayered structures under different growth conditions. SIMS analysis showed that intrinsic carbon incorporation around two orders can be controlled effectively by varying the growth parameters. D
Autor:
Sandeep Dalal, R.A. Khan, Renu Tyagi, Akhilesh Pandey, Ufana Riaz, M. V. G. Padmavati, Sachin K. Saini, Rajesh K. Bag, Kapil Narang, Vikash K. Singh
Publikováno v:
Journal of Materials Science: Materials in Electronics. 30:18910-18918
AlN nucleation layers (NL) with different thickness were grown on 4H-SiC substrates using MOVPE. The growth evolution of the AlN layer on SiC was investigated. The effect of fully strained AlN nucleation layer (NL) on the AlN/SiC interface and on the
Autor:
Kapil Narang, Aman Arora, Renu Tyagi, Akhilesh Pandey, Rajesh K. Bag, Rajendra Singh, M. V. G. Padmavati, Sachin K. Saini, Vikash K. Singh, Ruby Khan
Publikováno v:
Journal of Alloys and Compounds. 815:152283
AlGaN/GaN high electron mobility transistor (HEMT) epi-structures were grown on SiC substrate using MOVPE. In this paper, the growth of high-quality AlGaN epi-layer in AlGaN/GaN HEMT is reported. The optimization was carried out to improve surface mo