Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Sachiaki Tezuka"'
Autor:
Shunpei Yamazaki, Fumito Isaka, Toshikazu Ohno, Yuji Egi, Sachiaki Tezuka, Motomu Kurata, Hiromi Sawai, Ryosuke Motoyoshi, Etsuko Asano, Satoru Saito, Tatsuya Onuki, Takanori Matsuzaki, Michio Tajima
Publikováno v:
Communications Materials, Vol 5, Iss 1, Pp 1-11 (2024)
Abstract Formation of a single crystalline oxide semiconductor on an insulating film as a channel material capable of three-dimensional (3D) stacking would enable 3D very-large-scale integration circuits. This study presents a technique for forming s
Externí odkaz:
https://doaj.org/article/934b7800c3704b62a4be9be871324384
Autor:
Naomi Yazaki, Ryosuke Motoyoshi, Shiyu Numata, Kazuaki Ohshima, Yuji Egi, Fumito Isaka, Toshikazu Ohno, Sachiaki Tezuka, Toshiki Hamada, Kazuma Furutani, Kazuki Tsuda, Takanori Matsuzaki, Tatsuya Onuki, Tsutomu Murakawa, Hitoshi Kunitake, Masaharu Kobayashi, Shunpei Yamazaki
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 11, Pp 467-472 (2023)
Aiming to reduce the area of a ferroelectric random access memory (FeRAM), we fabricated an FeRAM having a 1T1C configuration by using a ${c}$ -axis aligned crystalline In-Ga-Zn-O field-effect transistor, which we call OSFET, with a high breakdown vo
Externí odkaz:
https://doaj.org/article/130a499579cf486f97ff60e88658e798
Publikováno v:
IEEJ Transactions on Sensors and Micromachines. 126:334-339
Diamond thin films fabricated by MPCVD (microwave plasma chemical vapor deposition) are available for use as a field emitter material, because of its high mechanical quality, thermal conductivity, chemical stability, environmental tolerance, and NEA
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::76365645ab0cf701921012f844757239
https://doi.org/10.1541/ieejsmas.126.334
https://doi.org/10.1541/ieejsmas.126.334
Autor:
Sachiaki Tezuka, Shunpei Yamazaki, Noritaka Ishihara, Hideomi Suzawa, Daisuke Matsubayashi, Shinpei Matsuda, Tetsuhiro Tanaka, Toshimitsu Obonai, Yoshiyuki Kobayashi
Publikováno v:
Japanese Journal of Applied Physics. 53:04EF02
We found out that in an indium gallium zinc oxide (IGZO) transistor, the energy barrier in the channel region, i.e., the conduction band energy relative to the Fermi energy is lowered by electrons flowing from n+ regions under source and drain electr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8f35b1c6f8a74857bc249ee7731137e7
https://doi.org/10.7567/jjap.53.04ef02
https://doi.org/10.7567/jjap.53.04ef02