Zobrazeno 1 - 1
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pro vyhledávání: '"Sachi Niki"'
Publikováno v:
MRS Advances. 1:3847-3852
Bulk GaN substrates are of significant interest because they offer both high quality and low dislocation densities. Our group has previously reported the formation and movement of dislocations in high quality bulk GaN in response to nano-indentation.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fd71cac016800a0e15586078e52e428d
https://doi.org/10.1557/adv.2016.165
https://doi.org/10.1557/adv.2016.165
