Zobrazeno 1 - 10
of 95
pro vyhledávání: '"Sacepe B"'
Autor:
Baeva, E. M., Titova, N. A., Veyrat, L., Sacépé, B., Semenov, A. V., Goltsman, G. N., Kardakova, A. I., Khrapai, V. S.
Publikováno v:
Phys. Rev. Applied 15, 054014 (2021)
Here we examine the role of the amorphous insulating substrate in the thermal relaxation in thin NbN, InO$_x$, and Au/Ni films at temperatures above 5 K. The studied samples are made up of metal bridges on an amorphous insulating layer lying on or su
Externí odkaz:
http://arxiv.org/abs/2101.07071
Autor:
Tamir, I., Benyamini, A., Telford, E. J., Gorniaczyk, F., Doron, A., Levinson, T., Wang, D., Gay, F., Sacépé, B., Hone, J., Watanabe, K., Taniguchi, T., Dean, C. R., Pasupathy, A. N., Shahar, D.
All non-interacting two-dimensional electronic systems are expected to exhibit an insulating ground state. This conspicuous absence of the metallic phase has been challenged only in the case of low-disorder, low density, semiconducting systems where
Externí odkaz:
http://arxiv.org/abs/1804.04648
Publikováno v:
Communications Physics 2, 4 (2019)
Topological Josephson junctions designed on the surface of a 3D-topological insulator (TI) harbor Majorana bound states (MBS's) among a continuum of conventional Andreev bound states. The distinct feature of these MBS's lies in the $4\pi$-periodicity
Externí odkaz:
http://arxiv.org/abs/1803.07674
Autor:
Dupré, O., Calvo, A. Benoît M., Catalano, A., Goupy, J., Hoarau, C., Klein, T., Calvez, K. Le, Sacépé, B., Monfardini, A., Levy-Bertrand, F.
Publikováno v:
O. Dupr\'e et al, Supercond. Sci. Technol. 30, 04007 (2017)
We have fabricated planar amorphous Indium Oxide superconducting resonators ($T_c\sim2.8$ K) that are sensitive to frequency-selective radiation in the range of 7 to 10 GHz. Those values lay far below twice the superconducting gap that worths about 2
Externí odkaz:
http://arxiv.org/abs/1802.10379
Autor:
Sacépé, B., Seidemann, J., Gay, F., Davenport, K., Rogachev, A., Ovadia, M., Michaeli, K., Feigel'man, M. V.
Publikováno v:
Nature Physics 15, 48 (2019)
Strongly disordered superconductors in a magnetic field display many characteristic properties of type-II superconductivity--- except at low temperatures where an anomalous linear $T$-dependence of the resistive critical field $B_{c2}$ is routinely o
Externí odkaz:
http://arxiv.org/abs/1609.07105
Autor:
Kardakova, A., Shishkin, A., Semenov, A., Ryabchun, S., Bousquet, J., Eon, D., Sacepe, B., Klein, Th., Bustarret, E., Goltsman, G. N., Klapwijk, T. M.
Publikováno v:
Physical Review B, 93, 064506, 2016
We report a study of the relaxation time of the restoration of the resistive superconducting state in single crystalline boron-doped diamond using amplitude-modulated absorption of (sub-)THz radiation (AMAR). The films grown on an insulating diamond
Externí odkaz:
http://arxiv.org/abs/1602.04046
Autor:
Sacepe, B., Seidemann, J., Ovadia, M., Tamir, I., Shahar, D., Chapelier, C., Strunk, C., Piot, B. A.
Publikováno v:
Phys. Rev. B 91, 220508(R) (2015)
We conducted a systematic study of the disorder dependence of the termination of superconductivity, at high magnetic fields (B), of amorphous indium oxide films. Our lower disorder films show conventional behavior where superconductivity is terminate
Externí odkaz:
http://arxiv.org/abs/1504.00528
Publikováno v:
Scientific Reports 5, Article number: 13503 (2015)
In superconductors the zero-resistance current-flow is protected from dissipation at finite temperatures (T) by virtue of the short-circuit condition maintained by the electrons that remain in the condensed state. The recently suggested finite-T insu
Externí odkaz:
http://arxiv.org/abs/1406.7510
We report a novel method for the fabrication of superconducting nanodevices based on niobium. The well-known difficulties of lithographic patterning of high-quality niobium are overcome by replacing the usual organic resist mask by a metallic one. Th
Externí odkaz:
http://arxiv.org/abs/1304.5381
Autor:
Martin, S. C., Samaddar, S., Sacépé, B., Kimouche, A., Coraux, J., Fuchs, F., Grévin, B., Courtois, H., Winkelmann, C. B.
Publikováno v:
Phys. Rev. B 91, 041406(R) (2015) (small changes, different title)
Graphene on a dielectric substrate exhibits spatial doping inhomogeneities, forming electron-hole puddles. Understanding and controlling the latter is of crucial importance for unraveling many of graphene's fundamental properties at the Dirac point.
Externí odkaz:
http://arxiv.org/abs/1304.1183