Zobrazeno 1 - 10
of 63
pro vyhledávání: '"Saburo Takamiya"'
Autor:
Yasuki Aihara, Saburo Takamiya, Hiroki Seto, Masahiro Totsuka, Koichi Iiyama, Yuhki Fujino, Takayuki Hisaka
Publikováno v:
Japanese Journal of Applied Physics. 45:4915-4920
A recess-gate-type n-channel depletion mode metal–semiconductor field-effect transistor (MESFET), a metal–oxide–semiconductor field-effect transistor (MOSFET) prepared by UV and ozone oxidation, and metal–insulator–semiconductor field-effec
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::556eb630faf477448e928772e727f34a
https://doi.org/10.1143/jjap.45.4915
https://doi.org/10.1143/jjap.45.4915
Autor:
Yuhki Fujino, Koichi Iiyama, N.C. Paul, M. Takebe, Mitoko Tametou, Hiroki Seto, Saburo Takamiya
Publikováno v:
Japanese Journal of Applied Physics. 45:2417-2421
We have reported that the oxi-nitridation of GaAs forms an insulator–semiconductor interface without deteriorating the crystallographic order of GaAs, and is applicable to the fabrication of compound semiconductor devices with metal–insulator–s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e220697462741a4829be02710887e348
https://doi.org/10.1143/jjap.45.2417
https://doi.org/10.1143/jjap.45.2417
Publikováno v:
Electronics and Communications in Japan (Part II: Electronics). 89:18-26
Test fabrication of n-channel p-channel enhancement/inversion mode GaAs-MISFET with a GaAs oxy-nitrided gate insulation film formed by nitriding after oxidation of the GaAs surface was performed. In comparison with MOSFET with only oxidation, the pin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::245cd895e17d6c312172b6faeaa8f0c9
https://doi.org/10.1002/ecjb.20222
https://doi.org/10.1002/ecjb.20222
Publikováno v:
IEICE Transactions on Electronics. :1304-1309
A lasing charactrization of a Brillouin/erbium optical fiber laser (BEFL) is experimentally discussed. In the BEFL, an erbium-doped fiber amplifier (EDFA) is incorporated into the Brillouin laser resonator to enhance small Brillouin gain, which makes
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::28a5d1f30a697f1968560223fd683683
https://doi.org/10.1093/ietele/e88-c.6.1304
https://doi.org/10.1093/ietele/e88-c.6.1304
Autor:
Satoshi Miyamura, Yuhki Kasai, Koichi Iiyama, Takao Inokuma, Saburo Takamiya, Youichi Yamamura
Publikováno v:
Japanese Journal of Applied Physics. 42:7244-7249
The electronic states of Ga-terminated and As-terminated GaAs(100)-(1×1) surfaces and those surfaces with adsorbed O and S are studied by molecular orbital calculation using small cluster models and the discrete variational Xα method. Without adsor
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::975f4d26aa7940ab2f866843eb04d90d
https://doi.org/10.1143/jjap.42.7244
https://doi.org/10.1143/jjap.42.7244
Autor:
Takao Inokuma, Saburo Takamiya, M. Takebe, Kazuki Nakamura, N.C. Paul, Yasuto Yonezawa, Koichi Iiyama, Nobuo Ohtsuka, Akira Takemoto, Koichi Higashimine
Publikováno v:
Japanese Journal of Applied Physics. 42:4264-4272
Oxidation by the UV & ozone process, nitridation by the nitrogen helicon-wave-excited plasma process, and the combination of these processes are applied to (100) GaAs wafers. An atomic force microscope, X-ray photoelectron spectroscopy, a transmissio
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5422d62b58a24996231eb9fd1c9f6065
https://doi.org/10.1143/jjap.42.4264
https://doi.org/10.1143/jjap.42.4264
Publikováno v:
Journal of JSEE. 51:51-54
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b6da1dd5b494b4bc304ac447280b50f0
https://doi.org/10.4307/jsee.51.2_51
https://doi.org/10.4307/jsee.51.2_51
Autor:
Nobuo Ohtsuka, Saburo Takamiya, Kouichi Iiyama, Koichi Higashimine, Y. Ohta, Y. Kita, M. Nasuno
Publikováno v:
IEEE Transactions on Electron Devices. 49:1856-1862
金沢大学工学部
A gate insulating layer with single nm-order thickness for suppressing gate leakage current is one of the key factors in extending downsizing limits, based upon the scaling rule, of field-effect-type transistors. We describ
A gate insulating layer with single nm-order thickness for suppressing gate leakage current is one of the key factors in extending downsizing limits, based upon the scaling rule, of field-effect-type transistors. We describ
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ad9fd834b2cacd78f012f4420be8a7a8
https://doi.org/10.1109/ted.2002.804720
https://doi.org/10.1109/ted.2002.804720
Autor:
Shoushin Hashimoto, Tomoyuki Sugimura, Kouichi Iiyama, Yuki Kasai, Takayuki Katsui, Saburo Takamiya, Tatsutoshi Tsuzuku, Takao Inokuma
Publikováno v:
Solid-State Electronics. 43:1571-1576
Direct oxidation of GaAs wafers, by using UV and ozone oxidation system, was performed to form nm-thin GaAs-oxide layers. Composition of the oxidized layer, studied by XPS analysis, shows depth-dependent atomic percentage of the Ga, As, and O. Surfac
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::07c41c3ee949c1f3792641dce62837cd
https://doi.org/10.1016/s0038-1101(99)00105-7
https://doi.org/10.1016/s0038-1101(99)00105-7
Publikováno v:
Electronics and Communications in Japan (Part II: Electronics). 81:30-36
We have proposed and demonstrated a method of linearizing the optical frequency sweep of a laser diode by superimposing a rectangular signal on the modulating triangular signal for high-resolution FMCW reflectometry. First, we describe the principle
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::00a5808e904e3f5c0d719408429890f9
https://doi.org/10.1002/(sici)1520-6432(199810)81:10<30::aid-ecjb4>3.0.co
https://doi.org/10.1002/(sici)1520-6432(199810)81:10<30::aid-ecjb4>3.0.co