Zobrazeno 1 - 10
of 95
pro vyhledávání: '"Saburo Shimizu"'
Publikováno v:
Zairyo-to-Kankyo. 55:320-324
Autor:
Ken-ichi Suga, Hidenobu Hori, Yoshiyuki Yamamoto, Saki Sonoda, Saburo Shimizu, Koichi Kindo, T. Sasaki
Publikováno v:
Physica B. 324(1-4):142-150
Wurtzite GaN:Mn films on sapphire substrates were successfully grown by use of the molecular beam epitaxy (MBE) system. The film has an extremely high Curie temperature of around 940 K, although the Mn concentration is only about 3 ~ 5 %. Magnetizati
Autor:
Ken-ichi Suga, Koichi Kindo, Masugu Sato, Takahiko Sasaki, Saburo Shimizu, Hidenobu Hori, Yoshiyuki Yamamoto, Saki Sonoda
Publikováno v:
IEEE Transactions on Magnetics. 38:2859-2862
Using ammonia as nitrogen source for molecular beam epitaxy, the GaN-based diluted magnetic semiconductor Ga1-xMnxN is successfully grown with Mn concentration up to x~6.8% and with p-type conductivity. The films have wurtzite structure with substitu
Publikováno v:
Journal of Membrane Science. 192:193-199
Electrolysis of hydriodic acid with HI molality of ca. 10 mol/kg was examined in the presence of iodine using a commercial cation-exchange membrane, CMH, as the separator. Redox reaction of iodine–iodide ions that occurred at the glassy carbon elec
Autor:
Xu-Qiang Shen, Saki Sonoda, Toshihide Ide, Hajime Okumura, Mitsuaki Shimizu, Saburo Shimizu, Sung Hwan Cho
Publikováno v:
Journal of Crystal Growth. :447-452
AlGaN/GaN single heterostructures (SH) were grown on sapphire (0 0 0 1) substrates by plasma-assisted molecular beam epitaxy. It was found that multi-AlN buffer layers are effective to improve the two-dimensional electron gas (2DEG) mobility. High 2D
Autor:
Mitsuaki Shimizu, Sung Hwan Cho, Hajime Okumura, Saki Sonoda, Toshihide Ide, S. Hara, Xu-Qiang Shen, Saburo Shimizu
Publikováno v:
Journal of Crystal Growth. 218:155-160
GaN heteroepitaxial growth on sapphire (0 0 0 1) substrates was carried out by radio-frequency (RF) plasma-assisted molecular beam epitaxy. The lattice polarity of RF-MBE-grown GaN "lms on sapphire (0 0 0 1) substrates was investigated as a function
Publikováno v:
Journal of Membrane Science. 175:171-179
Electrodialysis of hydriodic acid was studied in the presence of iodine and in the HI molality range of 8–12 mol/kg using commercial ion exchange membranes, CMH and APS. Owing to the high transport numbers of counter ions and low water permeation o
Publikováno v:
Journal of Crystal Growth. 209:364-367
GaN : In films having the single polarity of (0 0 0 1) were successfully grown on sapphire(0 0 0 1) substrate by plasma-assisted molecular beam epitaxy (MBE). The determinations of polarity were carried out by coaxial impact collision ion scattering
Autor:
Saburo Shimizu, Toshihide Ide, Shiro Hara, Hajime Okumura, Saki Sonoda, Mitsuaki Shimizu, Xu-Qiang Shen
Publikováno v:
Hyomen Kagaku. 21:169-176
Surface reconstruction and their transition have been examined for MBE-grown GaN epitaxial layers. Several types of reconstruction were observed depending on the growth condition, crystal structure etc., and the reconstruction transitions were found
Publikováno v:
AIChE Journal. 46:92-98
Hydrogen separation characteristics of silica membranes prepared by chemical-vapor deposition (CVD)-in an H{sub 2}-H{sub 2}O-HI gaseous mixture were evaluated for the application to hydrogen iodide decomposition in the thermochemical iodine-sulfur (I