Zobrazeno 1 - 7
of 7
pro vyhledávání: '"Sabrina Fadloun"'
Autor:
Elisabeth Blanquet, Dean Stephens, Patrice Gergaud, Chris Jones, Thierry Mourier, Sabrina Fadloun, Steve Burgess, Amit Rastogi
Publikováno v:
International Symposium on Microelectronics. 2018:000718-000727
MOCVD (Metal-Organic Chemical Vapor Deposition) copper metallization was developed on 300mm wafers, to fulfil 3D Through-Silicon Via (TSV) interconnect requirements. Using a fluorine-free organometallic precursor, the bis(dimethylamino-2-propoxy)copp
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::660df4e05091d3f13ea5a32f624dd2ab
https://doi.org/10.4071/2380-4505-2018.1.000718
https://doi.org/10.4071/2380-4505-2018.1.000718
Autor:
Sylvain Maitrejean, Andrew Price, Steve Burgess, Stéphane Minoret, Fabien Piallat, Chris Jones, Thierry Mourier, Yun Zhou, Sabrina Fadloun, Daniel Mathiot, Larissa Djomeni
Publikováno v:
Microelectronic Engineering. 120:127-132
This article is related to the development of a new low temperature CVD titanium nitride deposition process for the formation of a copper diffusion barrier in 3D TSV integration, using a metalorganic precursor and NH 3 . The physicochemical propertie
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5af5c7d326ce45ff99bbb48cc64eae7a
https://doi.org/10.1016/j.mee.2013.11.010
https://doi.org/10.1016/j.mee.2013.11.010
Autor:
Steve Burgess, Chris Jones, Laurent Vandroux, Stephane Minoret, Thierry Mourier, Sylvain Maitrejean, Larissa Djomeni, Andrew Price, Sabrina Fadloun, A. Roule
Publikováno v:
Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT). 2013:001322-001342
In recent years, 3D integration has become an alternative solution to the “More Moore” concept for providing circuits with higher performance or increased functionality. Via-Middle TSV is considered a reference integration scheme and requires voi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d1c7efb696fd99b04178dd0cf71dd8d3
https://doi.org/10.4071/2013dpc-wp12
https://doi.org/10.4071/2013dpc-wp12
Publikováno v:
ECS Transactions. 25:337-344
Thanks to relaxed pattern dimensions and friendly wet process cost, MEMS technology uses a great number of wet etch process steps during process flow. Nevertheless, as dimensions are downscaling, for the very used gold wet etch process, a limited und
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3503b81a4c6e72cde57ac4d1c1f4162e
https://doi.org/10.1149/1.3202671
https://doi.org/10.1149/1.3202671
Autor:
G. Audoit, Stephane Minoret, Larissa Djomeni, Sabrina Fadloun, Jean-Marc Fabbri, Jean-Paul Barnes, Thierry Mourier
Publikováno v:
Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 34:03H137
Two important issues for the integration of through-silicon via (TSV) interconnects are whether the TSVs are completely filled with Cu and whether unwanted Cu diffusion occurs. To address these issues, specific analysis protocols were developed using
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f0d7867544153bf5bb43140964432d88
https://doi.org/10.1116/1.4947463
https://doi.org/10.1116/1.4947463
Autor:
Jean-Paul Barnes, Denis Rouchon, Stéphane Minoret, Daniel Mathiot, Sabrina Fadloun, Andrew Price, Steve Burgess, Laurent Vandroux, Larissa Djomeni, Thierry Mourier
Publikováno v:
ECS Meeting Abstracts. :1469-1469
In order to overcome the performances, dimensions and cost limit beyond the 22 nm technology node, three-dimensional (3-D) integration with through-silicon-vias (TSVs) has emerged as an effective solution. Another potential of the TSVs is their promi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0ba80a35c7a13f352e5517068cde1d3e
https://doi.org/10.1149/ma2014-01/39/1469
https://doi.org/10.1149/ma2014-01/39/1469
Publikováno v:
ECS Meeting Abstracts. :2096-2096
not Available.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b339cac8c1540d3ef349e5f181816f5b
https://doi.org/10.1149/ma2009-02/24/2096
https://doi.org/10.1149/ma2009-02/24/2096