Structural Evolution During Formation and Filling of Self-patterned Nanoholes on GaAs (100) Surfaces

Autor: Zhou Lin, Smith David, Sablon KA, Wang Zh, Salamo GJ

Publikováno v: Nanoscale Research Letters, Vol 3, Iss 12, Pp 530-533 (2008)

Abstract Nanohole formation on an AlAs/GaAs superlattice gives insight to both the “drilling” effect of Ga droplets on AlAs as compared to GaAs and the hole-filling process. The shape and depth of the nanoholes formed on GaAs (100) substrates has

Externí odkaz: https://doaj.org/article/088ed9dff5bb4654b4211a55e23bf0de

High Detectivity and Transparent Few-Layer MoS 2 /Glassy-Graphene Heterostructure Photodetectors.

Autor: Xu H; Department of Electronic and Electrical Engineering, University College London, Torrington Place, London, WC1E 7JE, UK., Han X; Department of Chemistry, University College London, 20 Gordon St, Bloomsbury, London, WC1H 0AJ, UK., Dai X; College of Physics, Optoelectronics and Energy and Collaborative Innovation Centre of Suzhou Nano Science and Technology, Soochow University, Suzhou, 215006, China., Liu W; Department of Electronic and Electrical Engineering, University College London, Torrington Place, London, WC1E 7JE, UK.; London Centre for Nanotechnology, University College London, London, WC1H 0AH, UK., Wu J; Department of Electronic and Electrical Engineering, University College London, Torrington Place, London, WC1E 7JE, UK., Zhu J; College of Physics, Optoelectronics and Energy and Collaborative Innovation Centre of Suzhou Nano Science and Technology, Soochow University, Suzhou, 215006, China., Kim D; Department of Electronic and Electrical Engineering, University College London, Torrington Place, London, WC1E 7JE, UK., Zou G; College of Physics, Optoelectronics and Energy and Collaborative Innovation Centre of Suzhou Nano Science and Technology, Soochow University, Suzhou, 215006, China., Sablon KA; United States Army Research Laboratory, 2800 Powder Mill Road, Adelphi, MD, 20783-1197, USA., Sergeev A; United States Army Research Laboratory, 2800 Powder Mill Road, Adelphi, MD, 20783-1197, USA., Guo Z; Department of Chemistry, University College London, 20 Gordon St, Bloomsbury, London, WC1H 0AJ, UK., Liu H; Department of Electronic and Electrical Engineering, University College London, Torrington Place, London, WC1E 7JE, UK.

Publikováno v: Advanced materials (Deerfield Beach, Fla.) [Adv Mater] 2018 Mar; Vol. 30 (13), pp. e1706561. Date of Electronic Publication: 2018 Jan 30.

Ellipsoidal InAs Quantum Dots.

Autor: Sablon KA; University of Arkansas, Fayetteville, AR USA.

Publikováno v: Nanoscale research letters [Nanoscale Res Lett] 2009 Jun 12; Vol. 4 (10), pp. 1256. Date of Electronic Publication: 2009 Jun 12.

InAs quantum dot clusters grown on GaAs droplet templates: surface morphologies and optical properties.

Autor: Liang BL; Physics Department, University of Arkansas, Fayetteville, AR 72701, USA., Dorogan VG, Mazur YI, Strom NW, Lee JH, Sablon KA, Wang ZhM, Salamo GJ

Publikováno v: Journal of nanoscience and nanotechnology [J Nanosci Nanotechnol] 2009 May; Vol. 9 (5), pp. 3320-4.

Polymer Single-Nanowire Optical Sensor.

Autor: Sablon KA

Publikováno v: Nanoscale research letters [Nanoscale Res Lett] 2009 Jan; Vol. 4 (1), pp. 94-95. Date of Electronic Publication: 2008 Nov 07.