Zobrazeno 1 - 10
of 252
pro vyhledávání: '"Sabelfeld, Karl"'
Autor:
Fernández-Garrido, Sergio, Kaganer, Vladimir M., Sabelfeld, Karl K., Gotschke, Tobias, Grandal, Javier, Calleja, Enrique, Geelhaar, Lutz, Brandt, Oliver
Publikováno v:
Nano Lett. 2013, 13, 7, 3274
We investigate the axial and radial growth of GaN nanowires upon a variation of the Ga flux during molecular beam epitaxial growth. An increase in the Ga flux promotes radial growth without affecting the axial growth rate. In contrast, a decrease in
Externí odkaz:
http://arxiv.org/abs/2402.01756
Autor:
Lähnemann, Jonas, Kaganer, Vladimir M., Sabelfeld, Karl K., Kireeva, Anastasya E., Jahn, Uwe, Chèze, Caroline, Calarco, Raffaella, Brandt, Oliver
Publikováno v:
Phys. Rev. Applied 17, 024019 (2022)
We investigate the impact of threading dislocations with an edge component (a or a+c-type) on carrier recombination and diffusion in GaN(0001) layers close to the surface as well as in the bulk. To this end, we utilize cathodoluminescence imaging of
Externí odkaz:
http://arxiv.org/abs/2009.14634
Autor:
Brandt, Oliver, Kaganer, Vladimir M., Lähnemann, Jonas, Flissikowski, Timur, Pfüller, Carsten, Sabelfeld, Karl K., Kireeva, Anastasya E., Chèze, Caroline, Calarco, Raffaella, Grahn, Holger T., Jahn, Uwe
Publikováno v:
Phys. Rev. Applied 17, 024018 (2022)
We determine the diffusion length of excess carriers in GaN by spatially resolved cathodoluminescence spectroscopy utilizing a single quantum well as carrier collector or carrier sink. Monochromatic intensity profiles across the quantum well are reco
Externí odkaz:
http://arxiv.org/abs/2009.13983
Autor:
Jahn, Uwe, Kaganer, Vladimir M., Sabelfeld, Karl K., Kireeva, Anastasya E., Lähnemann, Jonas, Pfüller, Carsten, Flissikowski, Timur, Chèze, Caroline, Biermann, Klaus, Calarco, Raffaella, Brandt, Oliver
Publikováno v:
Phys. Rev. Applied 17, 024017 (2022)
The determination of the carrier diffusion length of semiconductors such as GaN and GaAs by cathodoluminescence imaging requires accurate knowledge about the spatial distribution of generated carriers. To obtain the lateral distribution of generated
Externí odkaz:
http://arxiv.org/abs/2002.08713
Autor:
Kaganer, Vladimir M., Lähnemann, Jonas, Pfüller, Carsten, Sabelfeld, Karl K., Kireeva, Anastasya E., Brandt, Oliver
Publikováno v:
Phys. Rev. Applied 12, 054038 (2019)
We investigate, both theoretically and experimentally, the drift, diffusion, and recombination of excitons in the strain field of an edge threading dislocation intersecting the GaN{0001} surface. We calculate and measure hyperspectral cathodoluminesc
Externí odkaz:
http://arxiv.org/abs/1906.05645
Autor:
Sabelfeld, Karl1 (AUTHOR) sabelfeld.karl@yahoo.de
Publikováno v:
Fluctuation & Noise Letters. Feb2024, Vol. 23 Issue 1, p1-12. 12p.
The strain field of a dislocation emerging at a free surface is partially relaxed to ensure stress free boundary conditions. We show that this relaxation strain at the outcrop of edge threading dislocations in GaN{0001} gives rise to a piezoelectric
Externí odkaz:
http://arxiv.org/abs/1801.03307
Autor:
Sabelfeld, Karl K., Agarkov, Georgy
Publikováno v:
Monte Carlo Methods & Applications; Dec2024, Vol. 30 Issue 4, p375-388, 14p
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