Zobrazeno 1 - 10
of 28
pro vyhledávání: '"Sabarni Palit"'
Autor:
Niloy Choudhury, William Albert Challener, Jonathan Knight, Jason Harris Karp, Yujie Cheng, Fei Yu, Adam Floyd, Sabarni Palit, Daniel S. Homa, Matthias A. Kasten, Gary Pickrell
Publikováno v:
SPIE Proceedings.
The increase in domestic natural gas production has brought attention to the environmental impacts of persistent gas leakages. The desire to identify fugitive gas emission, specifically for methane, presents new sensing challenges within the producti
Autor:
Lin Luan, Matthew Royal, Talmage Tyler, Sulochana Dhar, Sabarni Palit, Nan Marie Jokerst, Martin A. Brooke
Publikováno v:
IEEE Transactions on Biomedical Circuits and Systems. 3:202-211
Chip-scale integrated planar photonic sensing systems for portable diagnostics and monitoring are emerging, as photonic components are integrated into systems with silicon (Si), Si complementary metal-oxide semiconductor, and fluidics. This paper rev
Publikováno v:
Journal of Biophotonics. 2:212-226
Medicine, environmental monitoring, and security are application areas for miniaturized, portable sensing systems. The emerging integration of sensors with other components (electronic, photonic, fluidic) is moving sensing toward higher levels of por
Autor:
Sabarni Palit, Stanislav I. Soloviev, Xingguang Zhu, Peter Micah Sandvik, Sergei Ivanovich Dolinsky
Publikováno v:
SPIE Proceedings.
A Silicon Carbide Solid-State Photomultiplier (SiC-PM) was designed, fabricated and characterized for the first time. A die size of 3x3 mm 2 has a 2x2 mm 2 pixelated photosensitive area on it. The pixelated area consists of 16 sub-arrays of 0.5x0.5 m
Autor:
Li Airey, Aaron Jay Knobloch, William Albert Challener, Roger Jones, Sabarni Palit, Russell Craddock
Publikováno v:
SPIE Proceedings.
The technology for enhanced geothermal systems (EGS), in which fractures connecting deep underground wells are deliberately formed through high pressure stimulation for energy generation, is projected to enormously expand the available reserves of ge
Heterogeneous integration of thin film compound semiconductor lasers and SU8 waveguides on SiO 2 /Si
Publikováno v:
SPIE Proceedings.
We present the heterogeneous integration of a 3.8 μm thick InGaAs/GaAs edge emitting laser that was metal-metal bonded to SiO2/Si and end-fire coupled into a 2.8 μm thick tapered SU8 polymer waveguide integrated on the same substrate. The system wa
Publikováno v:
Novel In-Plane Semiconductor Lasers IX.
The integration of thin film edge emitting lasers onto silicon enables the realization of planar photonic structures for interconnection and for miniaturized optical systems that can be integrated in their entirety at the chip scale. These thin film
Autor:
David J. Smith, Dimitri Basov, Sabarni Palit, Bong-Jun Kim, Tom Driscoll, Hyun-Tak Kim, Byung-Gyu Chae, Yong-Wook Lee, Massimiliano Di Ventra, Nan Marie Jokerst
The resonant elements that grant metamaterials their unique properties have the fundamental limitation of restricting their useable frequency bandwidth. The development of frequency-agile metamaterials has helped to alleviate these bandwidth restrict
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::812450f72fc04c57484f0d3672bfc988
Publikováno v:
Conference on Lasers and Electro-Optics 2010.
A thin film GaAs based edge emitting laser is bonded to silicon, with one facet embedded in a passively aligned polymer waveguide. J th = 260 A/cm2 at λ=1002.5 nm is achieved for this integrated system.
Publikováno v:
Conference on Lasers and Electro-Optics/International Quantum Electronics Conference.
A p-ridge single quantum well thin film laser has been metal/metal bonded onto silicon for good thermal dissipation and low threshold current. The threshold current density is 244 A/cm2.