Zobrazeno 1 - 10
of 18
pro vyhledávání: '"Saban M. Hus"'
Autor:
Qingkai Qian, Wenjing Wu, Lintao Peng, Yuanxi Wang, Anne Marie Z. Tan, Liangbo Liang, Saban M. Hus, Ke Wang, Tanushree H. Choudhury, Joan M. Redwing, Alexander A. Puretzky, David B. Geohegan, Richard G. Hennig, Xuedan Ma, Shengxi Huang
Publikováno v:
ACS nano. 16(5)
The electronic and optical properties of two-dimensional materials can be strongly influenced by defects, some of which can find significant implementations, such as controllable doping, prolonged valley lifetime, and single-photon emissions. In this
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::51076f00321fd8c4fa5f9b6ec267e17d
https://pubmed.ncbi.nlm.nih.gov/35536919
https://pubmed.ncbi.nlm.nih.gov/35536919
Autor:
Liangbo Liang, Meng-Hsueh Chiang, Gavin Donnelly, Deji Akinwande, Fumin Huang, Saban M. Hus, Po An Chen, Wonhee Ko, An-Ping Li, Ruijing Ge
Publikováno v:
Hus, S M, Ge, R, Chen, P-A, Liang, L, Donnelly, G E, Ko, W, Huang, F, Chiang, M-H, Li, A-P & Akinwande, D 2020, ' Observation of single-defect memristor in an MoS2 atomic sheet ', Nature Nanotechnology, vol. 16, no. 2021, pp. 58 . https://doi.org/10.1038/s41565-020-00789-w
Non-volatile resistive switching, also known as memristor1 effect, where an electric field switches the resistance states of a two-terminal device, has emerged as an important concept in the development of high-density information storage, computing
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a07e6e735b5ff97bb4f665008dd3757f
https://pure.qub.ac.uk/en/publications/observation-of-singledefect-memristor-in-an-mos2-atomic-sheet(1dd31266-03d2-4ba0-b1b7-71b701f6a9d6).html
https://pure.qub.ac.uk/en/publications/observation-of-singledefect-memristor-in-an-mos2-atomic-sheet(1dd31266-03d2-4ba0-b1b7-71b701f6a9d6).html
Autor:
Saban M, Hus, Ruijing, Ge, Po-An, Chen, Liangbo, Liang, Gavin E, Donnelly, Wonhee, Ko, Fumin, Huang, Meng-Hsueh, Chiang, An-Ping, Li, Deji, Akinwande
Publikováno v:
Nature nanotechnology. 16(1)
Non-volatile resistive switching, also known as memristor
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::532ec842f2dccd8edc2d93e42b9ef527
https://pubmed.ncbi.nlm.nih.gov/33169008
https://pubmed.ncbi.nlm.nih.gov/33169008
Publikováno v:
ECS Meeting Abstracts. :605-605
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::040d887356f214fb04d36c665aa8b779
https://doi.org/10.1149/ma2021-0212605mtgabs
https://doi.org/10.1149/ma2021-0212605mtgabs
Autor:
Saban M. Hus, An-Ping Li
Publikováno v:
Progress in Surface Science. 92:176-201
Two-dimensional (2D) materials are intrinsically heterogeneous. Both localized defects, such as vacancies and dopants, and mesoscopic boundaries, such as surfaces and interfaces, give rise to compositional or structural heterogeneities. The presence
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c32f9f97092da215862e9e276d97d57c
https://doi.org/10.1016/j.progsurf.2017.07.001
https://doi.org/10.1016/j.progsurf.2017.07.001
Autor:
Ruijing Ge, Sanjay K. Banerjee, Yuqian Gu, Saban M. Hus, Deji Akinwande, Jack C. Lee, Jianping Shi, Yanfeng Zhang, Xiaohan Wu, Liangbo Liang, Emmanuel Okogbue, Harry Chou, Yeonwoong Jung
Publikováno v:
Advanced Materials. 33:2007792
Non-volatile resistive switching (NVRS) is a widely available effect in transitional metal oxides, colloquially known as memristors, and of broad interest for memory technology and neuromorphic computing. Until recently, NVRS was not known in other t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2c022c8668d129a568262acd6f00fb8c
https://doi.org/10.1002/adma.202007792
https://doi.org/10.1002/adma.202007792
Autor:
An-Ping Li, Lo-Yueh Chang, Christopher M. Rouleau, Xufan Li, Alexander A. Puretzky, Chia-Hao Chen, Jaekwang Lee, David B. Geohegan, Kai Wang, Kai Xiao, Saban M. Hus, Juan C. Idrobo, Ming-Wei Lin, Leonardo Basile, Yen Chien Kuo
Publikováno v:
Advanced Materials. 28:8240-8247
Carrier-type modulation is demonstrated in 2D transition metal dichalcogenides as n-type monolayer MoSe2 is converted to nondegenerate p-type monolayer Mo1-x Wx Se2 through isoelectronic doping. Although the alloys are mesoscopically uniform, the p-t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c6d751dcd5cbaff724343ff8af121f77
https://doi.org/10.1002/adma.201601991
https://doi.org/10.1002/adma.201601991
Autor:
Yong P. Chen, Saban M. Hus, Chuanxu Ma, Michael A. McGuire, Ireneusz Miotkowski, Helin Cao, An-Ping Li, Corentin Durand, Yang Xu, Xiaoguang Zhang
Publikováno v:
Nano Letters
Nano Letters, American Chemical Society, 2016, 16 (4), pp.2213-2220. ⟨10.1021/acs.nanolett.5b04425⟩
Nano Letters, American Chemical Society, 2016, 16 (4), pp.2213-2220. ⟨10.1021/acs.nanolett.5b04425⟩
International audience; We show a new method to differentiate conductivities from the surface states and the coexisting bulk states in topological insulators using a four-probe transport spectroscopy in a multiprobe scanning tunneling microscopy syst
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::95f3c78b794a4f60528cb9f7661c3a33
https://doi.org/10.1021/acs.nanolett.5b04425
https://doi.org/10.1021/acs.nanolett.5b04425
Autor:
Jinhwan Lee, Tom Berlijn, Jewook Park, Qiang Zou, Changgu Lee, Zheng Gai, Saban M. Hus, An-Ping Li, Giang D. Nguyen
Publikováno v:
Physical Review B. 97
The magnetic domains in two-dimensional layered material $\mathrm{F}{\mathrm{e}}_{3}\mathrm{GeT}{\mathrm{e}}_{2}$ are studied by using a variable-temperature scanning tunneling microscope with a magnetic tip after in situ cleaving of single crystals.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f9609a80965b34f6eb89af6cfd5a555f
https://doi.org/10.1103/physrevb.97.014425
https://doi.org/10.1103/physrevb.97.014425
Autor:
Arthur P. Baddorf, Xiaoguang Zhang, An-Ping Li, Wonhee Ko, Saban M. Hus, Yong P. Chen, Giang D. Nguyen
Publikováno v:
Physical Review Letters. 119
We demonstrate a new method for the detection of the spin-chemical potential in topological insulators using spin-polarized four-probe scanning tunneling microscopy on in situ cleaved ${\mathrm{Bi}}_{2}{\mathrm{Te}}_{2}\mathrm{Se}$ surfaces. Two-dime
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::dbd4ab7f04fec161935a189c62a8138f
https://doi.org/10.1103/physrevlett.119.137202
https://doi.org/10.1103/physrevlett.119.137202