Zobrazeno 1 - 10
of 26
pro vyhledávání: '"Saafie Salleh"'
Autor:
Norjannah Yusop, Fuei Pien Chee, Saafie Salleh, Fennyzra Elyce, Norsakinah Johrin, Pak Yan Moh, Mohd Sani Sarjadi, Rosfayanti Rasmidi
Publikováno v:
Results in Engineering, Vol 18, Iss , Pp 101122- (2023)
Poly[bis(4-phenyl) (2,4,6-trimethylphenylamine] (PTAA) is a new promising hole transport material, and [6,6]-Phenyl C61 butyric acid methyl ester (PCBM) is a suitable electron acceptor material. This study deposited thin-film PTAA and PCBM at differe
Externí odkaz:
https://doaj.org/article/a7550a4f3ae14bad840ec4d1c66ef938
Autor:
Rosfayanti Rasmidi, Mivolil D. S., Fuei Pien Chee, Floressy Juhim, Muhammad Izzuddin Rumaling, Saafie Salleh, K.A. Eswar, Khairul Anuar Mohd Salleh, Sofian Ibrahim
Publikováno v:
Materials Research, Vol 25 (2022)
This study investigates the effects of Gamma-irradiation on the structural, morphological and optical properties of 3,16-bis(tri isopropyl silylethynyl)pentacene (TIPS Pentacene) organic semiconductor films. The TIPS Pentacene thin films were irradia
Externí odkaz:
https://doaj.org/article/7730b89336e642c38f22239c7a8b6716
Autor:
Mivolil Duinong, Rosfayanti Rasmidi, Fuei Pien Chee, Saafie Salleh, Muhammad Izzuddin Rumaling, Floressy Juhim, Abdul Ismail Abdul Rani, Jackson Hian Wui Chang
In this paper, we present the investigation results of radiation-induced effects in metal-oxide-semiconductor (MOS) doped with moderate amounts of Zinc Oxide (ZnO) as a potential candidate for space-borne application. The samples were fabricated via
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e737e5c29daf51027ce43b71f2eca80b
https://doi.org/10.20944/preprints202304.0525.v1
https://doi.org/10.20944/preprints202304.0525.v1
Autor:
Mivolil Duinong, Rosfayanti Rasmidi, Fuei Pien Chee, Pak Yan Moh, Saafie Salleh, Khairul Anuar Mohd Salleh, Sofian Ibrahim
Publikováno v:
Coatings; Volume 12; Issue 10; Pages: 1590
In space, geostationary electronics located within the outer van Allen radiation belt are vulnerable to gamma radiation exposure. In terms of application, implementing an electronic system in a high radiation environment is impossible via conventiona
Publikováno v:
Advanced Science Letters. 23:1416-1421
Irradiation impact of gamma rays and X-rays on bipolar junction transistors (BJTs) in terms of electronic excitation due to transfer of energy and subsequent ionization, as well as energy transfer to atomic nuclei is studied using in-situ method. Com
Publikováno v:
Key Engineering Materials. 706:51-54
Neutron bombardment on semiconductor material causes defects, one such primary physical effect is the formation of displacement defects within the crystal lattice structure, and such defects effectively decrease the mean free path and thus shorten th
Publikováno v:
Acta Physica Polonica A. 130:93-97
Bombardment with high energy particles and photons can cause potential hazards to the electronic systems. These effects range from degradation of performance to functional failure, which can affect the operation of a system. Such failures become incr
Autor:
Afishah Alias, D S Mivolil, Khairul Anuar, Saafie Salleh, Fuei Pien Chee, Khairul Anuar Mohd Salleh, Rosfayanti Rasmidi, Abi Muttaqin Jalal Bayar, Mivolil Duinong
Publikováno v:
ECS Journal of Solid State Science and Technology. 9:045019
In this research, n-ZnO/p-CuGaO2 based semiconductor devices were fabricated and exposed to gamma rays with increasing total ionizing dose (TID) and neutron fluence at different flux. Based on the I-V properties, the decrease in the turn-on voltage o
Autor:
Afishah Alias, Saafie Salleh, Azmizam Manie Mani, Farah Lyana Shain, Lam Mui Li, Umar Faruk Shuib, Khairul Anuar Mohamad
Publikováno v:
Advanced Materials Research. 1119:29-33
This paper investigates the dependence of pressure onto characteristic of Aluminium Zinc Oxide (AZO) thin films. Films were deposited on a glass substrate by RF Magnetron Sputtering using AZO ceramic target with 99.99% purity. Sputtering was performe
Publikováno v:
Advanced Materials Research. 1107:678-683
Zinc Oxide (ZnO) has attracted much attention because of its high optical transmittance approximately ~80 % with a wide band gap of (3.3 eV at 300 K) and a relatively low cost material. ZnO thin films were deposited on plastic substrate using RF powe