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pro vyhledávání: '"Saaed S. Faraji"'
Publikováno v:
DSD
To overcome CMOS challenges including leakage power, volatility, scalability, and soft error vulnerability, Spin Transfer Torque Random Access Memory (STT-RAM) as a non-volatile memory has been utilized. Write error occurring because of variation in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e5818d02d11064fb2d1c823aa4b38348
https://doi.org/10.1109/dsd.2018.00044
https://doi.org/10.1109/dsd.2018.00044
