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pro vyhledávání: '"Sa. Ruggeri"'
Publikováno v:
IEEE Journal of Solid-State Circuits. 24:223-228
GaAs ICs for high-speed, 6-b, 1G-sample/s (Gs/s) data acquisition are under development, using a low-cost conventional D-MESFET technology. First-generation sample-and-holds (S/Hs) and comparators are currently being sampled to customers. Diode-bridg
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6b611815051a184642411041d842f92c
https://doi.org/10.1109/4.18580
https://doi.org/10.1109/4.18580
