Zobrazeno 1 - 10
of 42
pro vyhledávání: '"Sa-Hoang Huynh"'
Autor:
Cheng-Wei Liu, Jin-Ji Dai, Ssu-Kuan Wu, Nhu-Quynh Diep, Sa-Hoang Huynh, Thi-Thu Mai, Hua-Chiang Wen, Chi-Tsu Yuan, Wu-Ching Chou, Ji-Lin Shen, Huy-Hoang Luc
Publikováno v:
Scientific Reports, Vol 10, Iss 1, Pp 1-8 (2020)
Abstract Two-dimensional (2D) layered GaSe films were grown on GaAs (001), GaN/Sapphire, and Mica substrates by molecular beam epitaxy (MBE). The in situ reflective high-energy electron diffraction monitoring reveals randomly in-plane orientations of
Externí odkaz:
https://doaj.org/article/ab219f9fc0b54390a040ed381c155c46
Autor:
Nhu Quynh Diep, Yu Xun Chen, Duc Loc Nguyen, My Ngoc Duong, Ssu Kuan Wu, Cheng Wei Liu, Hua Chiang Wen, Wu Ching Chou, Jenh Yih Juang, Yao Jane Hsu, Van Qui Le, Ying Hao Chu, Sa Hoang Huynh
Publikováno v:
Journal of Materials Chemistry C. 11:1772-1781
This work reports molecular beam epitaxy of two-dimensional GaSe1−xTex ternary alloys that have recently attracted a lot of interest in physics and material sciences even though facing crucial challenges in their epitaxial technology.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3b9adf026f8eec8a18e9818f81e18eb2
https://doi.org/10.1039/d2tc04252e
https://doi.org/10.1039/d2tc04252e
Autor:
Nhu Quynh Diep, Van Qui Le, Duc Loc Nguyen, Tan Vinh Le, Ssu Kuan Wu, Wu Ching Chou, Hua Chiang Wen, Cheng Wei Liu, Thanh Tra Vu, Sa Hoang Huynh
Publikováno v:
ACS Applied Nano Materials. 4:8913-8921
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::85e83e8d05ca3587908053f26acd9a41
https://doi.org/10.1021/acsanm.1c01544
https://doi.org/10.1021/acsanm.1c01544
Autor:
Huy Binh Do, Quang Ho Luc, Minh Thien Huu Ha, Sa Hoang Huynh, Tuan Anh Nguyen, Yueh Chin Lin, Edward Yi Chang
Publikováno v:
AIP Advances, Vol 7, Iss 8, Pp 085208-085208-6 (2017)
The degeneration of the metal/HfO2 interfaces for Mo, Ni, and Pd gate metals was studied in this paper. An unstable PdOx interfacial layer formed at the Pd/HfO2 interface, inducing the oxygen segregation for the Pd/HfO2/InGaAs metal oxide capacitor (
Externí odkaz:
https://doaj.org/article/3262fc6026cc426bb8e1522f86a41a17
Autor:
Ching-Ting Lee, Quang Ho Luc, Minh Thien Huu Ha, Huy Binh Do, Sa Hoang Huynh, Edward Yi Chang
Publikováno v:
Thin Solid Films. 669:430-435
A method for the growth of high quality GaSb epilayer on GaAs (001) substrate is demonstrated in this study. It is found that a superior GaSb/GaAs interface can be obtained by depositing a thin Sb-precursor layer on the GaAs substrate containing a Ga
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b2283b4caaf6c7f6d6f5c6dfbbace0ec
https://doi.org/10.1016/j.tsf.2018.10.056
https://doi.org/10.1016/j.tsf.2018.10.056
Akademický článek
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Autor:
Quang Ho Luc, Yueh Chin Lin, Chenming Hu, Jia Wei Lin, Huy Binh Do, Minh Thien Huu Ha, Kun Sheng Yang, Chia Chi Chang, Sa Hoang Huynh, Edward Yi Chang, Tuan Anh Nguyen
Publikováno v:
IEEE Electron Device Letters. 39:339-342
This letter presents a remote NH3/N2 plasma treatment after gate oxide deposition for improving the electrical characteristics and the reliability of In0.53Ga0.47As FinFET. The plasma treatment enhanced drive current ( ${I}_{\textsf {DS}}$ ), transco
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::db732a696ee6ab4fa841e8f661868523
https://doi.org/10.1109/led.2018.2798589
https://doi.org/10.1109/led.2018.2798589
Akademický článek
Tento výsledek nelze pro nepřihlášené uživatele zobrazit.
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Autor:
Sa Hoang Huynh, Ching Yi Hsu, Yu Chih Hung, Yung Yi Tu, Deepak Anandan, Edward Yi Chang, Chien Ting Wu, Minh Thien Huu Ha, Ramesh Kumar Kakkerla, Hung Wei Yu, Chun Jung Su
Publikováno v:
Journal of Electronic Materials. 47:1071-1079
High-density (∼ 80/um2) vertical InAs nanowires (NWs) with small diameters (∼ 28 nm) were grown on bare Si (111) substrates by means of two-step metal organic chemical vapor deposition. There are two critical factors in the growth process: (1) a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fbdb6a62397f86480ff0409ec7c97722
https://doi.org/10.1007/s11664-017-5878-x
https://doi.org/10.1007/s11664-017-5878-x
Autor:
Edward Yi Chang, Chenming Hu, Huy Binh Do, Tuan Anh Nguyen, Minh Thien Huu Ha, Sa Hoang Huynh, Quang Ho Luc, Yueh Chin Lin
Publikováno v:
IEEE Electron Device Letters. 38:552-555
Use of the Mo/Ti/AlN/HfO2 metal/dielectric stack to increase the permittivity of HfO2 for low power consumption InGaAs-based MOSFET is investigated in this letter. The dielectric constant of HfO2 was found to increase by 47%, from 17 to 25, after Ti
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3e7db3f022ba3c1aaa2ed82ac7c0d85a
https://doi.org/10.1109/led.2017.2688389
https://doi.org/10.1109/led.2017.2688389